Transport dynamics of ultracold atoms in a triple-well transistor-like potential

The transport of atoms is experimentally studied in a transistor-like triple-well potential consisting of a narrow gate well surrounded by source and drain wells. Atoms are initially loaded into the source well with pre-determined temperature and chemical potential. Energetic atoms flow from the source, across the gate, and into the drain where they are removed using a resonant light beam. The manifestation of atom-atom interactions and dissipation is evidenced by a rapid population growth in the initially vacant gate well. The transport dynamics are shown to depend strongly on a feedback parameter determined by the relative heights of the two barriers forming the gate region. For a range of feedback parameter values, experiments establish that the gate atoms develop a larger chemical potential and lower temperature than those in the source.Comment: 13 pages, 5 figures, accepted for publication in NJ

High-Resolution Imaging and Optical Control of Bose-Einstein Condensates in an Atom Chip Magnetic Trap

A high-resolution projection and imaging system for ultracold atoms is implemented using a compound silicon and glass atom chip. The atom chip is metalized to enable magnetic trapping while glass regions enable high numerical aperture optical access to atoms residing in the magnetic trap about 100 microns below the chip surface. The atom chip serves as a wall of the vacuum system, which enables the use of commercial microscope components for projection and imaging. Holographically generated light patterns are used to optically slice a cigar-shaped magnetic trap into separate regions; this has been used to simultaneously generate up to four Bose-condensates. Using fluorescence techniques we have demonstrated in-trap imaging resolution down to 2.5 micronsComment: 4 pages, 5 figures, 12 reference

Experimental demonstration of an atomtronic battery

Operation of an atomtronic battery is demonstrated where a finite-temperature Bose–Einstein condensate stored in one half of a double-well potential is coupled to an initially empty load well that is impedance matched by a resonant terminator beam. The atom number and temperature of the condensate are monitored during the discharge cycle, and are used to calculate fundamental properties of the battery. The discharge behavior is analyzed according to a Thévenin equivalent circuit that contains a finite internal resistance to account for dissipation in the battery. Battery performance at multiple discharge rates is characterized by the peak power output, and the current and energy capacities of the system

Experimental Realization of Atomtronic Circuit Elements in Non-Equilibrium Ultracold Atomic Systems

Research in the field of atomtronics aims to develop a new paradigm for the use of ultracold atomic systems in a manner that mimics the functionality of electronic circuits and devices. Given the ubiquity of the electronic transistor and its application to a vast array of signal processing tasks, the development of its atomtronic counterpart is of significant interest. This dissertation presents the experimental studies of two atomtronic circuit elements: a battery and transistor. Experiments are conducted in an atom-chip-based apparatus utilizing hybrid magnetic and optical trapping techniques that enable one to pattern atomtronic circuit elements. An atomtronic battery is realized in a double-well trapping potential in which a finite-temperature Bose-Einstein condensate is prepared in a non-equilibrium state to generate thermodynamic gradients that drive atom current flow. Powered by the atomtronic battery, a triple-well atomtronic transistor is demonstrated, and quasi-steady-state behavior of the device is characterized. Results are found to be in agreement with a semiclassical model of the transistor that is also used to study the active properties of the device, including current gain. Based on these results, future directions regarding signal processing operations are proposed

Principles of an atomtronic transistor

A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source-gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device.Comment: 15 pages, 5 figures, accepted for publication in NJ