Disordering of InGaAs/GaAs strained quantum well structures induced by rare gas ion implantation

In this work we have investigated the effect of various implantation schemes on In(0.2)GaAs/GaAs/AlGaAs Single Quantum Well, where the implanted species are Argon and Helium, with doses in the range 1E12 to 1E14 at cm^2, at energy spanning 270 - 400 KeV and 30 to 50 KeV for Ar and He, respectively. Repetitive annealing processes were carried out between 735 and 870 degree(s)C and the interdiffusion was deduced by photoluminescence measurements. A maximum of 20 nm shift from He ion implanted Quantum Well with an high degree of reconstruction has been recorded, thus allowing the application of this disordering scheme for the realization of optoelectronic devices

Disordering of InGaAs/GaAs strained quantum well structures induced by rare gas ion implantation

In this work we have investigated the effect of various implantation schemes on In(0.2)GaAs/GaAs/AlGaAs Single Quantum Well, where the implanted species are Argon and Helium, with doses in the range 1E12 to 1E14 at cm^2, at energy spanning 270 - 400 KeV and 30 to 50 KeV for Ar and He, respectively. Repetitive annealing processes were carried out between 735 and 870 degree(s)C and the interdiffusion was deduced by photoluminescence measurements. A maximum of 20 nm shift from He ion implanted Quantum Well with an high degree of reconstruction has been recorded, thus allowing the application of this disordering scheme for the realization of optoelectronic devices

MOCVD growth of GaAs-Ga1-xAlxAs structures for microwave MESFET's

MOCVD GaAs-Ga1-xAlxAs epitaxial structures to fabricate MESFET's have been successfully grown in a low pressure MOCVD system. The growth parameters were optimized to obtain very high uniform epitaxial layers (o - 2%). MESFET's were fabricated and the devices with heterobuffer layer showed good transconductance and linearity as compared to conventional GaAs buffered structures. A 7.7 dB gain was performed at Idss/2 at 18 GHz. However the breakdown voltage has to be improved by lowering the back­ground doping in the Ga1-xAlxAs buffer layer

Ion-implantation and Annealing of Fe For Semiinsulating Layers Formation In Inp

We investigated the Fe ion implantation and annealing processes used to obtain semi-insulating buried layers in InP epitaxial structures for current confinement in laser device applications. SIMS and RBS-channeling were used as analytical tools. The results show that the annealing is a rather complicated process when the implant causes sample amorphization: high surface reactivity, anomalous dopant diffusion and segregation at damage sites together with inhomogeneous lattice reconstruction are observed