Sélection et caractérisation de clones résistants a la 5-bromodéoxyuridine ou a la 5-fluorodéoxyuridine a partir de la souche bhk 21/13

International audienc

All-optical delay line using semiconductor cavity solitons

An all-optical delay line based on the lateral drift of cavity solitons in semiconductor microresonators is proposed and experimentally demonstrated. The functionalities of the device proposed as well as its performance is analyzed and compared with recent alternative methods based on the decrease of group velocity in the vicinity of resonances. We show that the current limitations can be overcome using broader devices with tailored material responses

All-optical delay line using semiconductor cavity solitons (vol 92, 011101, 2008)

Correction of Pedaci, F. and Barland, S. and Caboche, E. and Firth, W.J. and Oppo, G.L. and Tredicce, J.R. and Ackemann, T. and Scroggie, A.J. (2008) All-optical delay line using semiconductor cavity solitons. Applied Physics Letters, 92 (1). ISSN 0003-695

Microresonator defects as sources of drifting cavity solitons

Cavity solitons (CS) are localized structures appearing as single intensity peaks in the homogeneous background of the field emitted by a nonlinear (micro)resonator. In real devices, their position is strongly influenced by the presence of defects in the device structure. In this Letter we show that the interplay between these defects and a phase gradient in the driving field induces the spontaneous formation of a regular sequence of CSs moving in the gradient direction. Hence, defects behave as a device built-in CS source, where the CS generation rate can be set by controlling the system parameters

Microresonator defects as sources of drifting cavity solitons

Cavity solitons (CS) are localized structures appearing as single intensity peaks in the homogeneous background of the field emitted by a nonlinear (micro)resonator. In real devices, their position is strongly influenced by the presence of defects in the device structure. In this Letter we show that the interplay between these defects and a phase gradient in the driving field induces the spontaneous formation of a regular sequence of CSs moving in the gradient direction. Hence, defects behave as a device built-in CS source, where the CS generation rate can be set by controlling the system parameters

Impedance investigation of BaCe0.85Y0.15O3-delta properties for hydrogen conductor in fuel cells

International audienceThe influence of the sintering conditions on the electrochemical properties of the proton conducting electrolyte BaCe0.85Y0.15O3-delta (BCY15) and Ni - based BCY15 cermet anode for application in high temperature proton conducting fuel cell are investigated by electrochemical impedance spectroscopy. The results show that at lower sintering temperatures due to the formation of parasitic Y2O3 phase an increase of both the electrolyte and electrode resistances is observed. This effect is strongly reduced by enhancement of the sintering temperature. The obtained BCY15 conductivity (sigma = 2.5x10(-2) S/cm at 700 degrees C) is comparable with that of the best proton conducting materials, while the BCY15-Ni cermet (with ASR = 2.5 Omega cm(2) at 700 degrees C) needs further optimization. The results of impedance investigations of BCY15 as proton conducting electrolyte and cermet anode have been applied in development of innovative high temperature dual membrane fuel cell