Monolithic Pixel Sensors in Deep-Submicron SOI Technology

Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and digital pixels on a 10 micrometer pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 micrometer FD-SOI process are briefly discussed.Comment: Proceedings of the PIXEL 2008 International Workshop, FNAL, Batavia, IL, 23-26 September 2008. Submitted to JINST - Journal of Instrumentatio

Resistência da variedade 'vitória Incaper 8142' de café conilon A Meloidogyne exigua.

Entre os fatores limitantes à produtividade da cultura do café estão as doenças, merecendo destaque o nematóide Meloidogyne exigua. Objetivou-se com esse trabalho avaliar o nível de resistência dos 13 clones que compõem a variedade clonal ?Vitória Incaper 8142? de café conilon (Coffea canephora Pierre), a M. exigua. Os 13 clones e mais uma testemunha foram inoculados com 7.000 indivíduos de M. exigua. Após 180 dias de inoculação, foi determinada a população final de nematóides por sistema radicular. Para determinação dos níveis de resistência foram considerados o fator de reprodução e a redução do fator de reprodução. A variedade ?Vitória Incaper 8142? apresentou clones com diferentes níveis de resistência. Os clones 3, 5, 8 e 13 apresentam resistência moderadas nas condições em que o estudo foi realizado e os demais foram suscetíveis

Reaction of Cultivar Coffee Vitória INCAPER 8142 of Cornillon to Parasitism of Meloidogyne exigua

Entre los factores que limitan la productividad de los cultivos de café en Brasil son las enfermedades, especialmente el nematodo Meloidogyne exigua presenta relevancia. El objetivo de este estudio fue evaluar la resistencia de 13 clones (1V, 2V, 3V, 4V, 5V, 6V, 7V, 8V, 9V, 10V, 11V, 12V y 13V) que comprenden la variedad clonal de café Conillón "Vitoria INCAPER 8142" (Coffea canephora Pierre), a M. exigua. Clones y un testigo (C. arabica cv. Catuai IAC-44) se inocularon con 7.000 individuos (huevos + juveniles) de M. exigua. Después de 180 días de la inoculación se determinó la población final de nematodos por planta. Para determinar los niveles de resistencia se consideró el factor de la reproducción y el Indice de reproducción. El cultivar "Victoria INCAPER 8142" mostró clones con diferentes niveles de resistencia. Los clones 1V, 4V, 7V, 9V e 12V se comportaron como huésped susceptible y eficiente, y los otros clones fueron anfitriones menos resistentes o ineficientes.Among factors limiting to the yield of the coffee crop are the diseases, deserving prominence the nematode Meloidogyne exigua. The objective of this work was to assess the level of resistance of 13 clones (1V, 2V, 3V, 4V, 5V, 6V, 7V, 8V, 9V, 10V, 11V, 12V and 13V) wich composes the clonal variety 'Vitória INCAPER 8142' of conilon coffee (Coffea canephora Pierre), to M. exigua. The 13 clones and more one control (C. arabica, cv. Catuaí IAC-44) were inoculated with 7,000 individuals of M. exigua. After 180 days of inoculation, the final population of nematodes per root system was determined. For determination of the resistance levels, both the reproduction factor and the reduction of the reproduction factor were considered. The variety 'Vitória INCAPER 8142' presented clones with different levels of resistance. Clones 1V, 4V, 7V, 9V and 12V behaved as susceptible or efficient host and the other clones were resistant or non-efficient host

Tests of monolithic pixel detectors in SOI technology with depleted substrate

This paper reviews the R&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R&D, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology

Tests of monolithic pixel detectors in SOI technology with depleted substrate

This paper reviews the R&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R&D, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology