Testosterone therapy and cardiovascular events among men: A systematic review and meta-analysis of placebo-controlled randomized trials

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Two-photon excited photoluminescence in InGaN multi-quantum-wells structures

In this work, we report on the two-photon absorption induced luminescence of InGaN multiple quantum wells grown on sapphire. When the sample was excited by femtosecond near-infrared laser pulses at room temperature, an intense luminescence signal peaked at ∼415 nm from the sample was observed, which indicates strong nonlinear optical effect in InGaN quantum well structures. The interferometric autocorrelated luminescence traces were recorded to verify the second order nonlinearity of the luminescence. In addition, the strong second harmonic generation signal of the excitation laser was also observed. The mechanism of the two-photon excited photoluminescence in InGaN quantum wells was discussed.published_or_final_versionpublished_or_final_versio

Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition

SiC nanocrystalline films on Si substrates deposited using advanced electron-cyclotron-resonance chemical-vapor deposition exhibit intense visible light emission at room temperature under laser excitation. Continuous-wave and time-resolved photoluminescence measurements for these SiC films were carried out at room temperature. The photon energy of the dominant emission peaks is higher than the band gap of cubic SiC. Room-temperature optical absorption measurements show a clear blueshift of the band gap of the samples with a decrease of the average size of the nanoclusters, indicating an expected quantum-confinement effect. However, the emission spectra are basically independent of the size. Temporal evolution of the dominant emissions exhibits double-exponential decay processes. Two distinct decay times of ∼200 ps and ∼1 ns were identified, which are at least two orders of magnitude faster than that of the bound-exciton transitions in bulk 3C-SiC at low temperature. Strong light emissions and short decay times strongly suggest that the radiative recombinations may be from some direct transitions such as self-trapped excitons on the surface of the nanoclusters. © 2000 American Institute of Physics.published_or_final_versio

Iron-Catalyzed Nitrene Insertion Reaction for Facile Construction of Amide Compounds

A facile method for the construction of amide compounds from aldehydes by an iron-catalyzed nitrene insertion reaction has been developed. Both aryl and aliphatic aldehydes can directly afford the corresponding amides with an iron(II)-terpyridine (tpy) complex formed in situ as catalyst, and PhI=NTs as nitrogen source under mild reaction conditions. An ESI-MS study revealed the formation of [Fe(tpy)NTs)]+ as a reaction intermediate. © Georg Thieme Verlag Stuttgart - New York.postprin

[FeIII(TF4DMAP)OTf] catalysed anti-Markovnikov oxidation of terminal aryl alkenes to aldehydes and transformation of methyl aryl tertiary amines to formamides with H2O2 as a terminal oxidant

Anti-Markovnikov oxidation of terminal aryl alkenes to aldehydes and transformation of N-methyl aryl tertiary amines to formamides with H2O2 as a terminal oxidant under mild conditions have been achieved with moderate to good product yields using [FeIII(TF4DMAP)OTf] as catalyst.postprin

CDK1-PDK1-PI3K/Akt signaling pathway regulates embryonic and induced pluripotency

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High-efficiency orange and yellow organic light-emitting devices using platinum(II) complexes containing extended π -conjugated cyclometalated ligands as dopant materials

Two luminescent platinum(II) complexes 1 and 2 containing extended π -conjugated cyclometalated ligands have been used as dopant materials for the construction of two high-efficiency organic light-emitting devices I and II. Device I (containing dopant 1) emits orange emission and exhibits a maximum external quantum efficiency of 12.4%, a maximum luminous efficiency of 32.3 cdA, and a maximum power efficiency of 11.2 lmW. Device II (containing dopant 2) emits yellow light and exhibits a maximum external quantum efficiency of 16.1%, a maximum luminous efficiency of 51.8 cdA, and a maximum power efficiency of 23.2 lmW. © 2007 American Institute of Physics.published_or_final_versio

Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing

OTFTs with HfTiO 2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N 2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N 2-annealed sample. This demonstrates that the N 2O annealing is an important surface treatment for preparing a high-quality insulator/organic interface. © 2007 IEEE.published_or_final_versio

Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric

Pentacene organic thin-film transistors (OTFTs) with high-κ HfLaO as gate insulator were fabricated. HfLaO film was prepared by sputtering method. To improve the film quality, the dielectric was annealed in N 2, NH 3, or O 2 at two temperatures, i.e., 200 °C and 400 °C, respectively. The I-V characteristics of the OTFTs and C-V characteristics of corresponding organic capacitors were measured. The OTFTs could operate at a low operating voltage of below 5 V, and the dielectric constant of the HfLaO film could be above ten. For all the annealing gases, the OTFTs annealed at 400 °C achieved higher carrier mobility than their counterparts annealed at 200 °C (with the one annealed in NH 3 at 400 °C showing the highest carrier mobility of 0.45 cm 2/ V·s), which could be supported by SEM images which indicate that pentacene tended to form larger grains on HfLaO annealed at 400 °C than on that annealed at 200 °C. The C-V measurement of the organic capacitors indicated that the localized charge density in the organic semiconductor/oxide was lower for the 400 °C annealing than for the 200 °C annealing. Furthermore, through the characterization of gate current leakage, HfLaO film annealed at 400 °C achieved much smaller leakage than that annealed at 200 °C. Since the maximum processing temperature of ITO glass substrates is around 400 °C , this study shows that 400 °C is suitable for the annealing of HfLaO film in high-performance OTFTs on glass substrate. © 2011 IEEE.published_or_final_versio

Hydrogen peroxide augments the injury effect of iron on the isolated rat heart and cardiomyocytes

2000-2001 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe