18,755 research outputs found

    Synchronization and oscillatory dynamics in heterogeneous mutually inhibited neurons

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    We study some mechanisms responsible for synchronous oscillations and loss of synchrony at physiologically relevant frequencies (10-200 Hz) in a network of heterogeneous inhibitory neurons. We focus on the factors that determine the level of synchrony and frequency of the network response, as well as the effects of mild heterogeneity on network dynamics. With mild heterogeneity, synchrony is never perfect and is relatively fragile. In addition, the effects of inhibition are more complex in mildly heterogeneous networks than in homogeneous ones. In the former, synchrony is broken in two distinct ways, depending on the ratio of the synaptic decay time to the period of repetitive action potentials (Ï„s/T\tau_s/T), where TT can be determined either from the network or from a single, self-inhibiting neuron. With Ï„s/T>2\tau_s/T > 2, corresponding to large applied current, small synaptic strength or large synaptic decay time, the effects of inhibition are largely tonic and heterogeneous neurons spike relatively independently. With Ï„s/T<1\tau_s/T < 1, synchrony breaks when faster cells begin to suppress their less excitable neighbors; cells that fire remain nearly synchronous. We show numerically that the behavior of mildly heterogeneous networks can be related to the behavior of single, self-inhibiting cells, which can be studied analytically.Comment: 17 pages, 6 figures, Kluwer.sty. Journal of Compuational Neuroscience (in press). Originally submitted to the neuro-sys archive which was never publicly announced (was 9802001

    New negative differential resistance device based on resonant interband tunneling

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    We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure

    Locally addressable tunnel barriers within a carbon nanotube

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    We report the realization and characterization of independently controllable tunnel barriers within a carbon nanotube. The nanotubes are mechanically bent or kinked using an atomic force microscope, and top gates are subsequently placed near each kink. Transport measurements indicate that the kinks form gate-controlled tunnel barriers, and that gates placed away from the kinks have little or no effect on conductance. The overall conductance of the nanotube can be controlled by tuning the transmissions of either the kinks or the metal-nanotube contacts.Comment: related papers at http://marcuslab.harvard.ed

    Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures

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    We report improved peak-to-valley current ratios and peak current densities in InAs/AlSb double-barrier, negative differential resistance tunnel structures. Our peak-to-valley current ratios are 2.9 at room temperature and 10 at liquid-nitrogen temperatures. Furthermore, we have observed peak current densities of 1.7×10^5 A/cm^2. These figures of merit are substantially better than previously reported values. The improvements are obtained by adding spacer layers near the barriers, thinner well regions, and thinner barriers

    Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures

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    We report large peak-to-valley current ratios in InAs/AlxGa1−xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200-Å-thick Al0.42Ga0.58Sb barrier. A comparison with a calculated current-voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The single-barrier structure is a candidate for high-speed devices because of expected short tunneling times and a wide NDR region

    Evolution of isolated turbulent trailing vortices

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    In this work, the temporal evolution of a low swirl-number turbulent Batchelor vortex is studied using pseudospectral direct numerical simulations. The solution of the governing equations in the vorticity-velocity form allows for accurate application of boundary conditions. The physics of the evolution is investigated with an emphasis on the mechanisms that influence the transport of axial and angular momentum. Excitation of normal mode instabilities gives rise to coherent large scale helical structures inside the vortical core. The radial growth of these helical structures and the action of axial shear and differential rotation results in the creation of a polarized vortex layer. This vortex layer evolves into a series of hairpin-shaped structures that subsequently breakdown into elongated fine scale vortices. Ultimately, the radially outward propagation of these structures results in the relaxation of the flow towards a stable high-swirl configuration. Two conserved quantities, based on the deviation from the laminar solution, are derived and these prove to be useful in characterizing the polarized vortex layer and enhancing the understanding of the transport process. The generation and evolution of the Reynolds stresses is also addressed

    Second-generation PLINK: rising to the challenge of larger and richer datasets

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    PLINK 1 is a widely used open-source C/C++ toolset for genome-wide association studies (GWAS) and research in population genetics. However, the steady accumulation of data from imputation and whole-genome sequencing studies has exposed a strong need for even faster and more scalable implementations of key functions. In addition, GWAS and population-genetic data now frequently contain probabilistic calls, phase information, and/or multiallelic variants, none of which can be represented by PLINK 1's primary data format. To address these issues, we are developing a second-generation codebase for PLINK. The first major release from this codebase, PLINK 1.9, introduces extensive use of bit-level parallelism, O(sqrt(n))-time/constant-space Hardy-Weinberg equilibrium and Fisher's exact tests, and many other algorithmic improvements. In combination, these changes accelerate most operations by 1-4 orders of magnitude, and allow the program to handle datasets too large to fit in RAM. This will be followed by PLINK 2.0, which will introduce (a) a new data format capable of efficiently representing probabilities, phase, and multiallelic variants, and (b) extensions of many functions to account for the new types of information. The second-generation versions of PLINK will offer dramatic improvements in performance and compatibility. For the first time, users without access to high-end computing resources can perform several essential analyses of the feature-rich and very large genetic datasets coming into use.Comment: 2 figures, 1 additional fil
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