Bilayer graphene: gap tunability and edge properties

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how the gap changes with the applied electric field. Within a parallel plate capacitor model and taking into account screening of the external field, we describe real back gated and/or chemically doped bilayer devices. We show that a gap between zero and midinfrared energies can be induced and externally tuned in these devices, making bilayer graphene very appealing from the point of view of applications. However, applications to nanotechnology require careful treatment of the effect of sample boundaries. This being particularly true in graphene, where the presence of edge states at zero energy -- the Fermi level of the undoped system -- has been extensively reported. Here we show that also bilayer graphene supports surface states localized at zigzag edges. The presence of two layers, however, allows for a new type of edge state which shows an enhanced penetration into the bulk and gives rise to band crossing phenomenon inside the gap of the biased bilayer system.Comment: 8 pages, 3 fugures, Proceedings of the International Conference on Theoretical Physics: Dubna-Nano200

The role of pressure on the magnetism of bilayer graphene

We study the effect of pressure on the localized magnetic moments induced by vacancies in bilayer graphene in the presence of topological defects breaking the bipartite nature of the lattice. By using a mean-field Hubbard model we address the two inequivalent types of vacancies that appear in the Bernal stacking bilayer graphene. We find that by applying pressure in the direction perpendicular to the layers the critical value of the Hubbard interaction needed to polarize the system decreases. The effect is particularly enhanced for one type of vacancies, and admits straightforward generalization to multilayer graphene in Bernal stacking and graphite. The present results clearly demonstrate that the magnetic behavior of multilayer graphene can be affected by mechanical transverse deformation

Super Five Brane Hamiltonian and the Chiral Degrees of Freedom

We construct the Hamiltonian of the super five brane in terms of its physical degrees of freedom. It does not depend on the inverse of the induced metric. Consequently, some singular configurations are physically admissible, implying an interpretation of the theory as a multiparticle one. The symmetries of the theory are analyzed from the canonical point of view in terms of the first and second class constraints. In particular it is shown how the chiral sector may be canonically reduced to its physical degrees of freedom.Comment: 16 pages, typos correcte

Mean-Field and Non-Mean-Field Behaviors in Scale-free Networks with Random Boolean Dynamics

We study two types of simplified Boolean dynamics over scale-free networks, both with synchronous update. Assigning only Boolean functions AND and XOR to the nodes with probability $1-p$ and $p$, respectively, we are able to analyze the density of 1's and the Hamming distance on the network by numerical simulations and by a mean-field approximation (annealed approximation). We show that the behavior is quite different if the node always enters in the dynamic as its own input (self-regulation) or not. The same conclusion holds for the Kauffman KN model. Moreover, the simulation results and the mean-field ones (i) agree well when there is no self-regulation, and (ii) disagree for small $p$ when self-regulation is present in the model.Comment: 12 pages, 7 figure