Electromigration-induced plasticity and texture in Cu interconnects

Plastic deformation has been observed in damascene Cu interconnect test structures during an in-situ electromigration experiment and before the onset of visible microstructural damage (ie. voiding) using a synchrotron technique of white beam X-ray microdiffraction. We show here that the extent of this electromigration-induced plasticity is dependent on the texture of the Cu grains in the line. In lines with strong <111> textures, the extent of plastic deformation is found to be relatively large compared to our plasticity results in the previous study [1] using another set of Cu lines with weaker textures. This is consistent with our earlier observation that the occurrence of plastic deformation in a given grain can be strongly correlated with the availability of a <112> direction of the crystal in the proximity of the direction of the electron flow in the line (within an angle of 10{sup o}). In <111> out-of-plane oriented grains in a damascene interconnect scheme, the crystal plane facing the sidewall tends to be a {l_brace}110{r_brace} plane,[2-4] so as to minimize interfacial energy. Therefore, it is deterministic rather than probabilistic that the <111> grains will have a <112> direction nearly parallel to the direction of electron flow. Thus, strong <111> textures lead to more plasticity, as we observe

Electromigration-induced Plasticity: Texture Correlation and Implications for Reliability Assessment

Plastic behavior has previously been observed in metallic interconnects undergoing high current density electromigration (EM) loading. In this study of Cu interconnects, using the synchrotron technique of white beam X-ray microdiffraction, we have further found preliminary evidence of a texture correlation. In lines with strong (111) textures, the extent of plastic deformation is found to be relatively large compared to that of weaker textures. We suggest that this strong (111) texture may lead to an extra path of mass transport in addition to the dominant interface diffusion in Cu EM. When this extra mass transport begins to affect the overall transport process, then the effective diffusivity, D{sub eff}, of the EM process is expected to deviate from that of interface diffusion only. This would have fundamental implications. We have some preliminary observations that this might be the case, and we report its implications for EM lifetime assessment in this manuscript

Plasticity-amplified diffusivity: dislocation cores as fast diffusion paths in Cu interconnects

The mass transport of Cu during electromigration (EM) testing is typically dominated by interface diffusion. If a mechanism other than interface diffusion begins to affect the overall transport process, then the effective diffusivity, D, of the EM process would deviate from that of interface diffusion only. This would have fundamental implications. We have preliminary evidence that this might be the case, and we report its implications for EM lifetime assessment in this manuscript. (11 References)