Making the market: How U.S. Policy influences near term agriculture and biofuel industry production and profitability under technology adoption

The beneficiaries of technology adoption in agriculture and biofuels markets in the United States are heavily influenced by domestic biofuel policies and market context. Biofuel mandates, one of the key pillars of domestic biofuel policies, may significantly alter the elasticity of demand for biofuels as well as the derived demand for maize used to produce a significant share of ethanol in the United States. Using a stochastic agriculture and biofuels model, we assess how the introduction of technology may affect the crops and biofuel markets under binding and non-binding biofuel mandates and discuss the implications for analysis of EU biofuel policies.biofuels, policy, technology adoption, mandates, Agricultural and Food Policy, Farm Management, Land Economics/Use,

Model Closure and Price Formation Under Switching Grain Market Regimes in South Africa

This paper develops the structure and closure of an econometric regime-switching model within a partial equilibrium framework that has the ability to generate reliable estimates and projections of endogenous variables under market switching regimes. Models used in policy evaluation usually either ignore the possibility of regime switching using just a single method of price determination based on average effects, or incorporate highly stylised components that may not reflect the complexities of a particular market. This paper proposes an approach that the authors believe allows the incorporation of features of regime switching in a multisector commodity level model that capture salient features of the South African market and therefore are able to produce more reliable projections of the evolution of the sector under alternative shocks.Agricultural and Food Policy, Crop Production/Industries,

Model closure and price formation under switching grain market regimes in South Africa

This paper develops the structure and closure of an econometric regime-switching model within a partial equilibrium framework that has the ability to generate reliable estimates and projections of endogenous variables under market switching regimes. Models used in policy evaluation usually either ignore the possibility of regime switching using just a single method of price determination based on average effects, or incorporate highly stylised components that may not reflect the complexities of a particular market. This paper proposes an approach that the authors believe allows the incorporation of features of regime switching in a multisector commodity level model that capture salient features of the South African market and therefore are able to produce more reliable projections of the evolution of the sector under alternative shocks.Crop Production/Industries, Marketing,

The liver in amoebic disease

During the past 8 years, 305 cases of amoebic disease have been examined at the Department of Diagnostic Radio-isotopes of the H. F. Verwoerd Hospital, Pretoria. Analysis of the data obtained by means of scintigraphy in 247 of these patients indicates that in vivo scintigraphy of the liver is a valuable method for the investigation of many aspects of the disease. Our observations on the localisation of the abscesses, the relationship between localisation and the frequency of complications, the macroscopical changes in the liver during the disease, the presence of a generalised reaction of the liver parenchyma to amoebae in some cases, and the healing rate of abscesses under different types of treatment, are reported in this article.S. Afr. Med. J., 48, 308 (1974)

Characterizing Scales of Genetic Recombination and Antibiotic Resistance in Pathogenic Bacteria Using Topological Data Analysis

Pathogenic bacteria present a large disease burden on human health. Control of these pathogens is hampered by rampant lateral gene transfer, whereby pathogenic strains may acquire genes conferring resistance to common antibiotics. Here we introduce tools from topological data analysis to characterize the frequency and scale of lateral gene transfer in bacteria, focusing on a set of pathogens of significant public health relevance. As a case study, we examine the spread of antibiotic resistance in Staphylococcus aureus. Finally, we consider the possible role of the human microbiome as a reservoir for antibiotic resistance genes.Comment: 12 pages, 6 figures. To appear in AMT 2014 Special Session on Advanced Methods of Interactive Data Mining for Personalized Medicin

A technique for thoracic duct-portal vein anastomosis in the dog

A technique for effecting a thoracic duct-portal vein anastomosis in dogs is described.The journals have been scanned in colour with a HP 5590 scanner; 600 dpi. Adobe Acrobat v.11 was used to OCR the text and also for the merging and conversion to the final presentation PDF-format

Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors

Citation: Hossain, T., Wei, D., Edgar, J. H., Garces, N. Y., Nepal, N., Hite, J. K., . . . Meyer H.M, III. (2015). Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 33(6). doi:10.1116/1.4931793The surface preparation for depositing Al2O3 for fabricating Au/Ni/Al2O3/n-GaN (0001) metal oxide semiconductor (MOS) capacitors was optimized as a step toward realization of high performance GaN MOSFETs. The GaN surface treatments studied included cleaning with piranha (H2O2:H2SO4 = 1:5), (NH4)2S, and 30% HF etches. By several metrics, the MOS capacitor with the piranha-etched GaN had the best characteristics. It had the lowest capacitance–voltage hysteresis, the smoothest Al2O3 surface as determined by atomic force microscopy (0.2 nm surface roughness), the lowest carbon concentration (∼0.78%) at the Al2O3/n-GaN interface (from x-ray photoelectron spectroscopy), and the lowest oxide-trap charge (QT = 1.6 × 1011 cm−2eV−1). Its interface trap density (Dit = 3.7 × 1012 cm−2eV−1), as measured with photon-assisted capacitance– voltage method, was the lowest from conduction band-edge to midgap