Bias Voltage and Temperature Dependence of Hot Electron Magnetotransport

We present a qualitative model study of energy and temperature dependence of hot electron magnetotransport. This model calculations are based on a simple argument that the inelastic scattering strength of hot electrons is strongly spin and energy dependent in the ferromagnets. Since there is no clear experimental data to compare with this model calculations, we are not able to extract clear physics from this model calculations. However, interestingly this calculations display that the magnetocurrent increases with bias voltage showing high magnetocurrent if spin dependent imaginary part of proper self energy effect has a substantial contribution to the hot electron magnetotransport. Along with that, the hot electron magnetotransport is strongly influence by the hot electron spin polarization at finite temperatures

Unified description of ballistic and diffusive carrier transport in semiconductor structures

A unified theoretical description of ballistic and diffusive carrier transport in parallel-plane semiconductor structures is developed within the semiclassical model. The approach is based on the introduction of a thermo-ballistic current consisting of carriers which move ballistically in the electric field provided by the band edge potential, and are thermalized at certain randomly distributed equilibration points by coupling to the background of impurity atoms and carriers in equilibrium. The sum of the thermo-ballistic and background currents is conserved, and is identified with the physical current. The current-voltage characteristic for nondegenerate systems and the zero-bias conductance for degenerate systems are expressed in terms of a reduced resistance. For arbitrary mean free path and arbitrary shape of the band edge potential profile, this quantity is determined from the solution of an integral equation, which also provides the quasi-Fermi level and the thermo-ballistic current. To illustrate the formalism, a number of simple examples are considered explicitly. The present work is compared with previous attempts towards a unified description of ballistic and diffusive transport.Comment: 23 pages, 10 figures, REVTEX

1. Étude du courant de transport par effet tunnel assisté thermiquement dans une jonction métal-semiconducteur

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1. Étude du courant de transport par effet tunnel assisté thermiquement dans une jonction métal-semiconducteur

Pas de Résumé disponibl