Entanglement of photons

It is argued that the title of this paper represents a misconception. Contrary to widespread beliefs it is electromagnetic field modes that are ``systems'' and can be entangled, not photons. The amount of entanglement in a given state is shown to depend on redefinitions of the modes; we calculate the minimum and maximum over all such redefinitions for several examples.Comment: 5 pages ReVTe

Resonant laser tunnelling

We propose an experiment involving a gaussian laser tunneling through a twin barrier dielectric structure. Of particular interest are the conditions upon the incident angle for resonance to occur. We provide some numerical calculations for a particular choice of laser wave length and dielectric refractive index which confirm our expectations.Comment: 15 pages, 6 figure

Damage thresholds of thin film materials and high reflectors at 248 nm

Twenty-ns, 248-nm KrF laser pulses were used to measure laser damage thresholds for halfwave-thick layers of 15 oxide and fluoride coating materials, and for high reflectance coatings made with 13 combinations of these materials. The damage thresholds of the reflectors and single-layer films were compared to measurements of several properties of the halfwave-thick films to determine whether measurements of these properties of single-layer films to determine whether measurements of these properties of single-layer films were useful for identifying materials for fabrication of damage resistant coatings

Measurements of the dependence of damage thresholds on laser wavelength, pulse duration and film thickness

Results of three experiments will be described. We used 351-nm and 355-nm pulses with durations of 0.6, 1, 5 and 9 ns measure thresholds for a variety of anti-reflectance and high reflectance coatings. The functional form t/sup m/, with t the pulse duration, was used to scale fluence thresholds measured at 0.6 ns to those measured at 9.0 ns. Values of the coefficient m ranged from 0.10 to 0.51. The average value was 0.30. In the second experiment, we measured thresholds at 1064 nm, 527 nm and 355 nm for single-frequency high reflectance ZrO/sub 2//SiO/sub 2/ coatings. Coatings for all three frequencies were deposited simultaneously by use of masks in the coating chamber. Thresholds varied from 2 to 4 J/cm/sup 2/ at 355 nm to 7 to 10 J/cm/sup 2/ at 1064 nm. The third experiment measured thresholds at 355 nm for antireflection coatings made with layer thicknesses varying from greater than one wavelength to less than a quarterwavelength. A significant variation of threshold with coating thickness was not observed, but the median thresholds increased slightly as coating thickness increased

Review of 1064-nm damage tests of electron-beam deposited Ta/sub 2/O/sub 5//SiO/sub 2/ antireflection coatings

Damage tests of Ta/sub 2/O/sub 5//SiO/sub 2/ antireflection films deposited under a variety of conditions showed that thresholds of films deposited at 175/sup 0/C were greater than thresholds of films deposited at either 250/sup 0/C or 325/sup 0/C. Deposition at high rate and low oxygen pressure produced highly absorptive films with low thresholds. Thresholds did not correlate with film reflectivity or net stress in the films, and correlated with film absorption only when the film absorption was greater than 10/sup 4/ ppM. Baking the films for four hours at 400/sup 0/C reduced film absorption, altered net film stress, and produced an increase in the average damage threshold