Electron Exchange Coupling for Single Donor Solid-State Qubits

Inter-valley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighbouring phosphorus donor electron states in silicon \cite{Koiller02,Koiller02A}. These same effects lead to an extreme sensitivity of the exchange energy on the relative orientation of the donor atoms, an issue of crucial importance in the construction silicon-based spin quantum computers. In this article we calculate the donor electron exchange coupling as a function of donor position incorporating the full Bloch structure of the Kohn-Luttinger electron wavefunctions. It is found that due to the rapidly oscillating nature of the terms they produce, the periodic part of the Bloch functions can be safely ignored in the Heitler-London integrals as was done by Koiller et. al. [Phys. Rev. Lett. 88,027903(2002),Phys. Rev. B. 66,115201(2002)], significantly reducing the complexity of calculations. We address issues of fabrication and calculate the expected exchange coupling between neighbouring donors that have been implanted into the silicon substrate using an 15keV ion beam in the so-called 'top down' fabrication scheme for a Kane solid-state quantum computer. In addition we calculate the exchange coupling as a function of the voltage bias on control gates used to manipulate the electron wavefunctions and implement quantum logic operations in the Kane proposal, and find that these gate biases can be used to both increase and decrease the magnitude of the exchange coupling between neighbouring donor electrons. The zero-bias results reconfirm those previously obtained by Koiller.Comment: 10 Pages, 8 Figures. To appear in Physical Review

Fast Non-Adiabatic Two Qubit Gates for the Kane Quantum Computer

In this paper we apply the canonical decomposition of two qubit unitaries to find pulse schemes to control the proposed Kane quantum computer. We explicitly find pulse sequences for the CNOT, swap, square root of swap and controlled Z rotations. We analyze the speed and fidelity of these gates, both of which compare favorably to existing schemes. The pulse sequences presented in this paper are theoretically faster, higher fidelity, and simpler than existing schemes. Any two qubit gate may be easily found and implemented using similar pulse sequences. Numerical simulation is used to verify the accuracy of each pulse scheme

A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor

The effect of the location of a negative stray charge associated with an acceptor type defect state in the channel of a nanowire transistor has been investigated using a Non Equilibrium Green’s Function Formalism in the effective mass approximation. Due to the fact that the nanowire cross-section is 2.2×2.2 nm2, we have calculated the effective masses using Tight Binding (TB) calculations. A third neighbor sp 3 TB model has been used. We have found that the on current is two time smaller when the charge is located in the source end as compared to its location in the drain end. We have also studied the effect on the current of the spatial distribution of the acceptor charge. The calculations show that when the charge is more distributed (de-localized) the effect of the blocking of the current is less efficient, so the current is higher