Spatially resolved spectroscopy of monolayer graphene on SiO2

We have carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on SiO$_2$ to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by electron and hole puddles that arise due to long range intravalley scattering from intrinsic ripples in graphene and random charged impurities. At low energy, we observe short range intervalley scattering which we attribute to lattice defects. Our results demonstrate that the electronic properties of graphene are influenced by intrinsic ripples, defects and the underlying SiO$_2$ substrate.Comment: 6 pages, 7 figures, extended versio

Testing Alternative Theories of the Property Price-Trading Volume Correlation

This article examines the correlation between the real housing price and trading volume. Contrary to the predictions of standard rational expectation models, a robust positive correlation between the two variables is identified. While no clear lead-lag relationship is found in the raw data, which is more consistent with the downpayment effect model, the medium-run component of the trading volume tends to lead (and Granger cause) the corresponding component of the property price, which is more consistent with the search theoretic model. An explanation for this difference in behavior is suggested and several future research directions are provided.

Epitaxial growth of deposited amorphous layer by laser annealing

We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited on a (100) single-crystal substrate into an epitaxial layer. The laser pulse annealing technique is shown to overcome the interfacial oxide obstacle which usually leads to polycrystalline formation in normal thermal annealing

Low Energy States of 3181Ga50^{81}_{31} Ga_{50} : Elements on the Doubly-Magic Nature of 78^{78}Ni

Excited levels were attributed to $^{81}_{31}$Ga$_{50}$ for the first time which were fed in the $\beta$-decay of its mother nucleus $^{81}$Zn produced in the fission of $^{nat}$U using the ISOL technique. We show that the structure of this nucleus is consistent with that of the less exotic proton-deficient N=50 isotones within the assumption of strong proton Z=28 and neutron N=50 effective shell effects.Comment: 4 pages, REVTeX 4, 5 figures (eps format