In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 °C

We report an in situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) from a 10-nm-thick amorphous mixture of Co and Si in the ratio 1:2 which was formed by codeposition of Co and Si near room temperature. Nuclei of CoSi2 are observed in the as-deposited film. These nuclei are epitaxial and extend through the whole film thickness. Upon annealing, these columnar epitaxial CoSi2 grains grow laterally at temperatures as low as 50 °C. The kinetics of this lateral epitaxial growth was studied at temperatures between 50 and 150 °C. The activation energy of the growth process is 0.8±0.1 eV

Maximum thickness of amorphous NiZr interlayers formed by a solid-state reaction technique

Formation of the equilibrium intermetallic compound NiZr in sputter deposited Ni/Zr diffusion couples is suppressed by the formation of a metastable amorphous NiZr alloy until a critical thickness of the amorphous NiZr interlayer is reached. The temperature dependence of this critical thickness is studied experimentally. A phenomenological model based on the premise of interfacial heterogeneous nucleation is proposed to understand the evolution of Ni/Zr diffusion couples

Lattice distortions in YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering

We have analyzed epitaxial, c-axis oriented YBa2Cu3O7–delta thin films grown in situ by sequential ion-beam sputtering on (100) SiTiO3 and (100) MgO substrates. X-ray diffraction studies showed the presence of both homogeneous and inhomogeneous lattice distortions along the c-direction. The c-axis lattice parameters ranged from 11.72 to 12.00 Å. The broadening of the (00l) Bragg peaks in excess of the broadening due to finite film thickness was found to be due to inhomogeneous lattice distortions. The overall trend in the data shows an increase of the inhomogeneous strains with the enlargement of the c-axis lattice parameter. The inhomogeneous lattice distortions are interpreted as fluctuations in the c-axis lattice parameter. The resistive transitions were found to be correlated to the lattice distortions. We show correlations between the midpoint Tc and the c-axis lattice parameter and between the transition widths and the inhomogeneous lattice distortions

Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by a Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced

Correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering

We have studied the correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering. Epitaxial, c-axis oriented YBa2Cu3O7–delta films were grown both on (100) SrTiO3 and on (100) MgO substrates following the stacking sequence of the ``123'' compound, with deposited layer thicknesses nominally equal to 1 monolayer. The c-axis lattice parameters obtained were larger than the corresponding lattice parameter in bulk samples, even after low-temperature anneals in O2. The transition temperatures were found to decrease with the enlargement of the c-axis lattice parameter. A clear correlation between growth temperature and the value of the c-axis lattice parameter was observed. The c-axis lattice parameter and the x-ray linewidth of Bragg reflections with the G vector along the c-axis were also found to be correlated. This suggests a relationship between the c-axis lattice parameter and the structural coherence of the epitaxial films

Thermal reaction of Al/Ti bilayers with contaminated interface

We have studied some new aspects of thermal reactions in Al/Ti bilayers in which the interface is purposely contaminated with oxygen. After annealing at a temperature of 460 °C, an Al_3Ti compound forms at the interface, moreover some Al diffuses through the Ti to form a compound at the free surface. The amount of aluminum at the free surface can be as large as at the interface. Nucleation and lateral growth of Al_3Ti at the interface are locally unfavorable. This results in a competition between the lateral growth of Al_3Ti at the Al/Ti interface and the diffusion of Al to the free surface. Once full coverage by Al_3Ti is obtained at the Al/Ti interface, the diffusion of Al to the surface becomes negligible

Compositional modulation in AlxGa1−xAs epilayers grown by molecular beam epitaxy on the (111) facets of grooves in a nonplanar substrate

We report the first observation of a lateral junction formed in an alloy due to an abrupt transition from segregated to random AlGaAs alloy compositions. Al0.25Ga0.75As epilayers were grown by molecular beam epitaxy on [011-bar] oriented grooves in a nonplanar (100) GaAs substrate. A quasi-periodic modulation of the aluminum concentration occurs spontaneously in material grown on the (111) facets of the groove, with a period of 50–70 Å along the [111] direction. The compositional modulation is associated with a reduction of the band gap by 130 meV, with respect to the random alloy. While segregation of the AlGaAs alloy has been seen previously, this is the first observation of segregation of AlGaAs grown on a (111) surface. The compositional modulation terminates abruptly at the boundaries of the (111) facet, forming abrupt lateral junctions in the AlGaAs layers grown on a groove

Radiation-induced interface phenomena: Decoration of high-energy density ion tracks

The effect of 20 MeV Cl4 + ions incident on Au-SiO2 and Ag-SiO2 interfaces was investigated using high-resolution transmission electron microscopy. Cross-sectional micrographs expose beam-induced gold interfacial transport and migration into the SiO2. No such migration was observed for silver films. The relevance of this phenomenon to the adhesion improvement found at corresponding irradiation doses is discussed

Electron tunneling time measured by photoluminescence excitation correlation spectroscopy

The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 Å has been measured at 80 K using photoluminescence excitation correlation spectroscopy. The decay time for samples with barrier thicknesses from 16 Å (≈12 ps) to 34 Å(≈800 ps) depends exponentially on barrier thickness, in good agreement with calculations of electron tunneling time derived from the energy width of the resonance. Electron and heavy hole carrier densities are observed to decay at the same rate, indicating a coupling between the two decay processes

Indium oxide diffusion barriers for Al/Si metallizations

Indium oxide (In2O3) films were prepared by reactive rf sputtering of an In target in O2/Ar plasma. We have investigated the application of these films as diffusion barriers in Si/In2O3/Al and Si/TiSi2.3/In2O3/Al metallizations. Scanning transmission electron microscopy together with energy dispersive analysis of x ray of cross-sectional Si/In2O3/Al specimens, and electrical measurements on shallow n + -p junction diodes were used to evaluate the diffusion barrier capability of In2O3 films. We find that 100-nm-thick In2O3 layers prevent the intermixing between Al and Si in Si/In2O3/Al contacts up to 650°C for 30 min, which makes this material one of the best thin-film diffusion barriers on record between Al and Si. (The Si-Al eutectic temperature is 577°C, Al melts at 660°C.) When a contacting layer of titanium silicide is incorporated to form a Si/TiSi2.3/In2O3/Al metallization structure, the thermal stability of the contact drops to 600°C for 30 min heat treatment