Correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering
We have studied the correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering. Epitaxial, c-axis oriented YBa2Cu3O7–delta films were grown both on (100) SrTiO3 and on (100) MgO substrates following the stacking sequence of the ``123'' compound, with deposited layer thicknesses nominally equal to 1 monolayer. The c-axis lattice parameters obtained were larger than the corresponding lattice parameter in bulk samples, even after low-temperature anneals in O2. The transition temperatures were found to decrease with the enlargement of the c-axis lattice parameter. A clear correlation between growth temperature and the value of the c-axis lattice parameter was observed. The c-axis lattice parameter and the x-ray linewidth of Bragg reflections with the G vector along the c-axis were also found to be correlated. This suggests a relationship between the c-axis lattice parameter and the structural coherence of the epitaxial films
