High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

Dislocation-free high-quality AlGaN/GaN heterostructures have been grown by molecular-beam epitaxy on semi-insulating bulk GaN substrates. Hall measurements performed in the 300 K–50 mK range show a low-temperature electron mobility exceeding 60 000 cm2/V s for an electron sheet density of 2.4×1012 cm−2. Magnetotransport experiments performed up to 15 T exhibit well-defined quantum Hall-effect features. The structures corresponding to the cyclotron and spin splitting were clearly resolved. From an analysis of the Shubnikov de Hass oscillations and the low-temperature mobility we found the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively. The high ratio of the scattering to quantum relaxation time indicates that the main scattering mechanisms, at low temperatures, are due to long-range potentials, such as Coulomb potentials of ionized impurities

Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells

GaInN/AlInN multiple quantum wells were grown by RF plasma--assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect and to improve optical parameters of intersubband structures grown on GaN substrates. The high quality intersubband structures were fabricated and investigated as an active region for applications in high-speed devices at telecommunication wavelengths. We observed the significant enhancement of intersubband absorption with an increase in the barrier thickness. We attribute this effect to the better localization of the second electron level in the quantum well. The strong absorption is very important on the way to intersubband devices designed for high-speed operation. The experimental results were compared with theoretical calculations which were performed within the electron effective mass approximation. A good agreement between experimental data and theoretical calculations was observed for the investigated samples

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

Dislocation-free high-quality AlGaN/GaN heterostructures have been grown by molecular-beam epitaxy on semi-insulating bulk GaN substrates. Hall measurements performed in the 300 K–50 mK range show a low-temperature electron mobility exceeding 60 000 cm2/V s for an electron sheet density of 2.4×1012 cm−2. Magnetotransport experiments performed up to 15 T exhibit well-defined quantum Hall-effect features. The structures corresponding to the cyclotron and spin splitting were clearly resolved. From an analysis of the Shubnikov de Hass oscillations and the low-temperature mobility we found the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively. The high ratio of the scattering to quantum relaxation time indicates that the main scattering mechanisms, at low temperatures, are due to long-range potentials, such as Coulomb potentials of ionized impurities