Structural, Optical, Electrical and Hall effect studies of Spray pyrolysised MgSnO 3 Thin films

Abstract: The aim of the present work was to find out the suitable substitute material for ITO. Because the production of ITO (Indium tin oxide) is low and the cost is very high. So MgSnO 3 can be considered as suitable alternative. In this work, MgSnO 3 is prepared by spray pyrolysis method using suitable molar concentration of magnesium acetate and stannic chloride (0.1:0.05, 0.1: 0.1, and 0.1:0.15) and isopropanal as the solvent at constant temperature (T s ) of 350°C.The structural analysis were taken. The prepared film at 0.1:0.05 molar concentrations shows the peak corresponding to MgO, SnO 2 and MgSnO 3 and film prepared at 0.1:0.15 molar concentration shows MgO, SnO 2. The peak position corresponding to SnO 2, MgSnO 3 and MgSnO 4 were observed for the films prepared with the concentration 0.1:0.15. From the results it is concluded that by varying the Ts and the concentration, peak corresponding to MgSnO 3 alone can be obtained, so that it can be used as a perfect TCO. The transmission studies carried out in the UV-Vis range shows that it has 60-84% transmittance and it has the optical bandgap varies from 3.65 -3.8eV. Hall effect measurements shows that MgSnO 3 shows ntype conductivity. The hall co-efficient, carrier concentration and the hall mobility were also observed

Electrodeposition of Sn, Se, SnSe and the material properties of SnSe films

Tin sulphide (SnS) films have been electrodeposited and the materials properties are reported, The potential-pH diagram of Sn and S in aqueous medium are superimposed to obtain the common immunity domains which predicts a pH value 1.5 and deposition potential of ·1.0 VseE for the stoichiometric deposition. Films are cathodically deposited on 5002 coated conducting glass substrates at bath temperatures 303-353 K. XRD studies show the polycrystalline nature with orthorhombic structure. The optical band gap of the snS film is 1.1 eV from the absorption studies. ESCA spectrum confirms the presence of Sn and S on the grey black sample. Uniform, smooth and pin hole free surface morphology is observed by SEM

XPS and Raman Studies on (002) Oriented Nanocrystalline ZnO Films Showing Temperature Dependent Optical Red Shift

Abstract Nanocrystalline zinc oxide (ZnO) thin films have been prepared on glass substrates at different temperatures through planar RF-magnetron sputtering. Structural properties with respect to substrate temperature have been studied with xray diffraction (XRD) patterns. The stoichiometry in the films is studied with X-ray photoemission spectroscopy (XPS). The shifts in the absorption edge of the films in the optical spectrum with the variation of substrate temperature are examined. Raman spectrum showed an increase in the average scattering intensity of the phonon peak at 580 cm -1 with respect to the reduction of particle size. The variation of conductivity of prepared ZnO films with respect to substrate temperature is studied well

Analysis of optical dispersion parameters and electrochromic properties of manganese-doped Co 3 O 4 dendrite structured thin films

Nebulized spray pyrolysis method was employed to deposit pristine and manganese (Mn) -doped Co3O4 thin films for different Mn concentrations (4, 6 and 8 at.%). The structural properties revealed that the obtained films show predominant orientation along (311) plane and significant peak shift was observed upon an increase in Mn doping confirms the substitution of Mn in Co3O4 lattice. The pristine Co3O4 film shows clustered grains and dendrite patterns appearing with the increase in Mn content as evident from SEM studies. The optical dispersion parameters of the prepared films of pristine and Mn doped Co3O4 films were determined from UV transmission spectra. The phase purity and elemental analysis of the films revealed single phase with better stoichiometric films were obtained. The XPS core level spectra of 6 at.% Mn doped Co3O4 films exhibited the presence of two different oxidation states (Mn2+ and Mn3+). The electrical resistivity of the films decreased with increase in Mn dopant concentration was observed from linear four probe method. The Co3O4 film deposited using 6 at.% of Mn exhibited a maximum optical modulation of 35% and coloration efficiency of 29 cm2/C