Elastic Pion Scattering on the Deuteron in a Multiple Scattering Model

Pion elastic scattering on deuterium is studied in the KMT multiple scattering approach developed in momentum space. Using a Paris wave function and the same methods and approximations as commonly used in pion scattering on heavier nuclei excellent agreement with differential cross section data is obtained for a wide range of pion energies. Only for $T_{\pi}>250$ MeV and very backward angles, discrepancies appear that are reminiscent of disagreements in pion scattering on $^3$He, $^3$H, and $^4$He. At low energies the second order corrections have been included. Polarization observables are studied in detail. While tensor analyzing powers are well reproduced, vector analyzing powers exhibit dramatic discrepancies.Comment: 25 pages LATEX and 9 postscript figures in a self-extracting uufile archiv

High-precision Studies of the 3^{\bf{3}}He(e,e′^{\bf{\prime}}p) Reaction at the Quasielastic Peak

Precision studies of the reaction $^{3}$He(e,e$^\prime$p) using the three-spectrometer facility at the Mainz microtron MAMI are presented. All data are for quasielastic kinematics at $|\vec{q} | =685$ MeV/c. Absolute cross sections were measured at three electron kinematics. For the measured missing momenta range from 10 to 165 MeV/c, no strength is observed for missing energies higher than 20 MeV. Distorted momentum distributions were extracted for the two-body breakup and the continuum. The longitudinal and transverse behavior was studied by measuring the cross section for three photon polarizations. The longitudinal and transverse nature of the cross sections is well described by a currently accepted and widely used prescription of the off-shell electron-nucleon cross-section. The results are compared to modern three-body calculations and to previous data.Comment: 4 pages, 3 figures. Submitted for publication in Phys. Rev. Let

Correlated barrier hopping in Ni0 films

The ac conduction in NiO films has been investigated in the frequency range 10 Hz < v < 10^9 Hz and at temperatures between 10 and 300 K. The frequency and the temperature dependence of the electrical conductivity can be consistently explained within a model developed for the mechanism of charge transfer in amorphous semiconductors which proposes that charge carriers hop over potential barriers between defect sites, the height of the barriers being correlated with the intersite separation