97 research outputs found
Gating of high-mobility InAs metamorphic heterostructures
We investigate the performance of gate-defined devices fabricated on high
mobility InAs metamorphic heterostructures. We find that heterostructures
capped with InGaAs often show signs of parallel conduction
due to proximity of their surface Fermi level to the conduction band minimum.
Here, we introduce a technique that can be used to estimate the density of this
surface charge that involves cool-downs from room temperature under gate bias.
We have been able to remove the parallel conduction under high positive bias,
but achieving full depletion has proven difficult. We find that by using
InAlAs as the barrier without an InGaAs
capping, a drastic reduction in parallel conduction can be achieved. Our
studies show that this does not change the transport properties of the quantum
well significantly. We achieved full depletion in InAlAs capped
heterostructures with non-hysteretic gating response suitable for fabrication
of gate-defined mesoscopic devices
Superconducting, Insulating, and Anomalous Metallic Regimes in a Gated Two-Dimensional Semiconductor-Superconductor Array
The superconductor-insulator transition in two dimensions has been widely
investigated as a paradigmatic quantum phase transition. The topic remains
controversial, however, because many experiments exhibit a metallic regime with
saturating low-temperature resistance, at odds with conventional theory. Here,
we explore this transition in a novel, highly controllable system, a
semiconductor heterostructure with epitaxial Al, patterned to form a regular
array of superconducting islands connected by a gateable quantum well. Spanning
nine orders of magnitude in resistance, the system exhibits regimes of
superconducting, metallic, and insulating behavior, along with signatures of
flux commensurability and vortex penetration. An in-plane magnetic field
eliminates the metallic regime, restoring the direct superconductor-insulator
transition, and improves scaling, while strongly altering the scaling exponent
Hall effect in laser ablated Co_2(Mn,Fe)Si thin films
Pulsed laser deposition was employed to grow thin films of the Heusler
compounds Co_2MnSi and Co_2FeSi. Epitaxial growth was realized both directly on
MgO (100) and on a Cr or Fe buffer layer. Structural analysis by x-ray and
electron diffraction shows for both materials the ordered L2_1 structure. Bulk
magnetization was determined with a SQUID magnetometer. The values agree with
the Slater-Pauling rule for half-metallic Heusler compounds. On the films grown
directly on the substrate measurements of the Hall effect have been performed.
The normal Hall effect is nearly temperature independent and points towards a
compensated Fermi surface. The anomalous contribution is found to be dominated
by skew scattering. A remarkable sign change of both normal and anomalous Hall
coefficients is observed on changing the valence electron count from 29 (Mn) to
30 (Fe).Comment: 9 pages, 6 figures submitted to J Phys
Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices
We discuss methods for imaging the nonequilibrium spin polarization of
electrons in Fe/GaAs spin transport devices. Both optically- and
electrically-injected spin distributions are studied by scanning
magneto-optical Kerr rotation microscopy. Related methods are used to
demonstrate electrical spin detection of optically-injected spin polarized
currents. Dynamical properties of spin transport are inferred from studies
based on the Hanle effect, and the influence of strain on spin transport data
in these devices is discussed.Comment: 5 pages, 6 figs. ICPS-28 proceedings (July'06, Vienna) for J. Appl.
Phy
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