Droplet shapes on structured substrates and conformal invariance

We consider the finite-size scaling of equilibrium droplet shapes for fluid adsorption (at bulk two-phase co-existence) on heterogeneous substrates and also in wedge geometries in which only a finite domain $\Lambda_{A}$ of the substrate is completely wet. For three-dimensional systems with short-ranged forces we use renormalization group ideas to establish that both the shape of the droplet height and the height-height correlations can be understood from the conformal invariance of an appropriate operator. This allows us to predict the explicit scaling form of the droplet height for a number of different domain shapes. For systems with long-ranged forces, conformal invariance is not obeyed but the droplet shape is still shown to exhibit strong scaling behaviour. We argue that droplet formation in heterogeneous wedge geometries also shows a number of different scaling regimes depending on the range of the forces. The conformal invariance of the wedge droplet shape for short-ranged forces is shown explicitly.Comment: 20 pages, 7 figures. (Submitted to J.Phys.:Cond.Mat.

Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures

The influence of boron segregation and silicon cap-layer thickness on two-dimensional hole gases (2-DHGs) has been investigated in Si/Si0.8Ge0.2/Si inverted-modulation-doped heterostructures grown by solid-source molecular-beam epitaxy. Boron segregation, which is significant in structures with small spacer layers, can be suppressed by growth interruption after the boron doping. How growth interruption affected the electrical properties of the 2-DHG and the boron doping profile as measured by secondary ion mass spectroscopy are reported. We report also on the role played by the unpassivated silicon cap, and compare carrier transport at the normal and inverted interfaces

Coupled Fluctuations near Critical Wetting

Recent work on the complete wetting transition has emphasized the role played by the coupling of fluctuations of the order parameter at the wall and at the depinning fluid interface. Extending this approach to the wetting transition itself we predict a novel crossover effect associated with the decoupling of fluctuations as the temperature is lowered towards the transition temperature T_W. Using this we are able to reanalyse recent Monte-Carlo simulation studies and extract a value \omega(T_W)=0.8 at T_W=0.9T_C in very good agreement with long standing theoretical predictions.Comment: 4 pages, LaTex, 1 postscript figur

SPIRAL Phase A: A Prototype Integral Field Spectrograph for the AAT

We present details of a prototype fiber feed for use on the Anglo-Australian Telescope (AAT) that uses a dedicated fiber-fed medium/high resolution (R > 10000) visible-band spectrograph to give integral field spectroscopy (IFS) of an extended object. A focal reducer couples light from the telescope to the close-packed lenslet array and fiber feed, allowing the spectrograph be used on other telescopes with the change of a single lens. By considering the properties of the fibers in the design of the spectrograph, an efficient design can be realised, and we present the first scientific results of a prototype spectrograph using a fiber feed with 37 spatial elements, namely the detection of Lithium confirming a brown dwarf candidate and IFS of the supernova remnant SN1987A.Comment: 41 pages, 15 figures, 3 tables; accepted by PAS

Elastic symmetries of defective crystals

I construct discrete and continuous crystal structures that are compatible with a given choice of dislocation density tensor, and (following Mal’cev) provide a canonical form for these discrete structures. The symmetries of the discrete structures extend uniquely to symmetries of corresponding continuous structures—I calculate these symmetries explicitly for a particular choice of dislocation density tensor and deduce corresponding constraints on energy functions which model defective crystals

Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases

We report a study of the influences of MBE conditions on the low-temperature mobilities of Si/Si0.8Ge0.2 2DHG structures. A significant dependence of 2DHG mobility on growth temperature is observed with the maximum mobility of 3640 cm2 V−1 s−1 at 5.4 K being achieved at the relatively high-growth temperature of 640 °C. This dependence is associated with a reduction in interface charge density. Studies on lower mobility samples show that Cu contamination can be reduced both by growth interruptions and by modifications to the Ge source; this reduction produces improvements in the low-temperature mobilities. We suggest that interface charge deriving from residual metal contamination is currently limiting the 4-K mobility

The structure of uniform discrete defective crystals

In the continuum context, a uniform crystal has dislocation density tensor constant in space. A simple iteration procedure generates an infinite set of points which is associated with uniform defective crystals. When certain necessary conditions are satisfied, there is a minimum (non-zero) separation of points in this set, so the set is discrete. We describe the structure of such sets explicitly, and show in particular that any such set is either a simple lattice or a 4-lattice

Uniform generation in trace monoids

We consider the problem of random uniform generation of traces (the elements of a free partially commutative monoid) in light of the uniform measure on the boundary at infinity of the associated monoid. We obtain a product decomposition of the uniform measure at infinity if the trace monoid has several irreducible components-a case where other notions such as Parry measures, are not defined. Random generation algorithms are then examined.Comment: Full version of the paper in MFCS 2015 with the same titl

Elemental boron doping behavior in silicon molecular beam epitaxy

Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C. Precipitation and surface segregation effects were observed at doping levels of 2×1020 cm−3 for growth temperatures above 600 °C. At growth temperatures below 600 °C, excellent profile control was achieved with complete electrical activation at concentrations of 2×1020 cm−3, corresponding to the optimal MBE growth conditions for a range of Si/SixGe1−x heterostructures