538 research outputs found

    Sequential multi-photon strategy for semiconductor-based terahertz detectors

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    A semiconductor-based terahertz-detector strategy, exploiting a bound-to-bound-to-continuum architecture, is presented and investigated. In particular, a ladder of equidistant energy levels is employed, whose step is tuned to the desired detection frequency and allows for sequential multi-photon absorption. Our theoretical analysis demonstrates that the proposed multi-subband scheme could represent a promising alternative to conventional quantum-well infrared photodetectors in the terahertz spectral region.Comment: Submitted to Journal of Applied Physic

    Gain and Loss in Quantum Cascade Lasers

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    We report gain calculations for a quantum cascade laser using a fully self-consistent quantum mechanical approach based on the theory of nonequilibrium Green functions. Both the absolute value of the gain as well as the spectral position at threshold are in excellent agreement with experimental findings for T=77 K. The gain strongly decreases with temperature.Comment: 7 pages, 3 figures directly include

    Terahertz detection schemes based on sequential multi-photon absorption

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    We present modeling and simulation of prototypical multi bound state quantum well infrared photodetectors and show that such a detection design may overcome the problems arising when the operation frequency is pushed down into the far infrared spectral region. In particular, after a simplified analysis on a parabolic-potential design, we propose a fully three-dimensional model based on a finite difference solution of the Boltzmann transport equation for realistic potential profiles. The performances of the proposed simulated devices are encouraging and support the idea that such design strategy may face the well-known dark-current problem.Comment: 3 pages, 2 figures; submitted to Applied Physics Letter

    Design and Simulation of THz Quantum Cascade Lasers

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    Strategies and concepts for the design of THz emitters based on the quantum cascade scheme are analyzed and modeled in terms of a fully three-dimensional Monte Carlo approach; this allows for a proper inclusion of both carrier-carrier and carrier-phonon scattering mechanisms. Starting from the simulation of previously published far-infrared emitters, where no population inversion is achieved, two innovative designs are proposed. The first one follows the well-established chirped-superlattice scheme whereas the second one employs a double-quantum well superlattice to allow energy relaxation through optical phonon emission. For both cases a significant population inversion is predicted at temperatures up to 80 K.Comment: 4 pages, 2 figures, 2 table

    Simulation of electronic quantum devices: Failure of semiclassical models

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    To simplify the design and optimization of new-generation nanomaterials and related electronic and optoelectronic quantum devices, energy dissipation versus decoherence phenomena are often simulated via local models based on theWigner-function formalism. Such a local description is, however, intrinsically incompatible with the fully quantum-mechanical (i.e., non-local) nature of the dissipation-free carrier dynamics. While the limitations of such hybrid treatments have already been pointed out in the past in diverse contexts, the spirit of the present work is to provide a more cohesive and critical review. To this aim, we focus on the fundamental link between the Wigner-function picture and the density-matrix formalism. In particular, we show that, starting from well-established density-matrix-based models, the resulting Wigner-function dissipation and/or thermalization dynamics is necessarily non-local. This leads to the conclusion that the use of local Wigner function models borrowed from the semiclassical Boltzmann theory is formally not justified and may produce unreliable results, and that such simplified local treatments should be replaced by fully non-local quantum models derived, e.g., via the density-matrix formalism

    Monte Carlo Kinetic Modeling of the Combined Carrier-Phonon Nonequilibrium Dynamics in Semiconductor Heterostructure Devices

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    Electron-phonon interaction is a key mechanism for charge and heat transport in both bulk materials as well as in state-of-the-art electronic and optoelectronic solid-state devices. Indeed, that of an effective heat dissipation, at the diverse design levels, has always been a primary issue in device operation and performances. In various circumstances, the charge carrier subsystem happens to be coupled to a significant nonequilibrium optical phonon population. This regime may be particularly pronounced in new-generation quantum emitters based on semiconductor heterostructures and operating both in the mid-infrared as well as in the terahertz region of the electromagnetic spectrum. In this chapter, we review a global kinetic approach based on a Monte Carlo simulation technique that we have recently proposed for the modeling of the combined carrier-phonon nonequilibrium dynamics in realistic unipolar multisubband device designs. Results for the case of a prototypical resonant-phonon terahertz emitting quantum cascade laser are shown and discussed

    Improving the operation temperature of semiconductor-based Terahertz photodetectors: A multiphoton design

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    We propose and theoretically investigate a semiconductor-based terahertz-detector design exploiting a multiphoton absorption strategy through a bound-to-bound-to-continuum scheme. Our results demonstrate that such a multisubband architecture may access values of the background-limited infrared photodetection temperature, significantly higher than those of conventional quantum well infrared photodetectors operating at the same frequency, and therefore could represent a better alternative to the latter in the terahertz spectral region

    Equipment review: Mechanical effects of heat-moisture exchangers in ventilated patients

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    Although they represent a valuable alternative to heated humidifiers, artificial noses have unfavourable mechanical effects. Most important of these is the increase in dead space, with consequent increase in the ventilation requirement. Also, artificial noses increase the inspiratory and expiratory resistance of the apparatus, and may mildly increase intrinsic positive end-expiratory pressure. The significance of these effects depends on the design and function of the artificial nose. The pure humidifying function results in just a moderate increase in dead space and resistance of the apparatus, whereas the combination of a filtering function with the humidifying function may critically increase the volume and the resistance of the artificial nose, especially when a mechanical filter is used. The increase in the inspiratory load of ventilation that is imposed by artificial noses, which is particularly significant for the combined heat-moisture exchanger filters, should be compensated for by an increase either in ventilator output or in patient's work of breathing. Although both approaches can be tolerated by most patients, some exceptions should be considered. The increased pressure and volume that are required to compensate for the artificial nose application increase the risk of barotrauma and volutrauma in those patients who have the most severe alterations in respiratory mechanics. Moreover, those patients who have very limited respiratory reserve may not be able to compensate for the inspiratory work imposed by an artificial nose. When we choose an artificial nose, we should take into account the volume and resistance of the available devices. We should also consider the mechanical effects of the artificial noses when setting mechanical ventilation and when assessing a patient's ability to breathe spontaneously

    Nonequilibrium Green's function theory for transport and gain properties of quantum cascade structures

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    The transport and gain properties of quantum cascade (QC) structures are investigated using a nonequilibrium Green's function (NGF) theory which includes quantum effects beyond a Boltzmann transport description. In the NGF theory, we include interface roughness, impurity, and electron-phonon scattering processes within a self-consistent Born approximation, and electron-electron scattering in a mean-field approximation. With this theory we obtain a description of the nonequilibrium stationary state of QC structures under an applied bias, and hence we determine transport properties, such as the current-voltage characteristic of these structures. We define two contributions to the current, one contribution driven by the scattering-free part of the Hamiltonian, and the other driven by the scattering Hamiltonian. We find that the dominant part of the current in these structures, in contrast to simple superlattice structures, is governed mainly by the scattering Hamiltonian. In addition, by considering the linear response of the stationary state of the structure to an applied optical field, we determine the linear susceptibility, and hence the gain or absorption spectra of the structure. A comparison of the spectra obtained from the more rigorous NGF theory with simpler models shows that the spectra tend to be offset to higher values in the simpler theories.Comment: 44 pages, 16 figures, appearing in Physical Review B Dec 200

    Dissipation and Decoherence in Nanodevices: a Generalized Fermi's Golden Rule

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    We shall revisit the conventional adiabatic or Markov approximation, which --contrary to the semiclassical case-- does not preserve the positive-definite character of the corresponding density matrix, thus leading to highly non-physical results. To overcome this serious limitation, originally pointed out and partially solved by Davies and co-workers almost three decades ago, we shall propose an alternative more general adiabatic procedure, which (i) is physically justified under the same validity restrictions of the conventional Markov approach, (ii) in the semiclassical limit reduces to the standard Fermi's golden rule, and (iii) describes a genuine Lindblad evolution, thus providing a reliable/robust treatment of energy-dissipation and dephasing processes in electronic quantum devices. Unlike standard master-equation formulations, the dependence of our approximation on the specific choice of the subsystem (that include the common partial trace reduction) does not threaten positivity, and quantum scattering rates are well defined even in case the subsystem is infinitely extended/has continuous spectrum.Comment: 6 pages, 0 figure
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