57 research outputs found
ELABORATION DE COUCHES EPITAXIEES DE SILICIUM PAR PULVERISATION IONIQUE
Des homoépitaxies de silicium ont été réalisées par pulvérisation ionique, à une température relativement basse. Les principaux résultats de cette étude sont : une vitesse de croissance proportionnelle au courant d'ions, un bon transfert du dopant entre la cible et le substrat, une faible rugosité des couches. Les conditions de croissance ont été définies de façon à obtenir, pour des couches minces (W ≈ 5000 Å) des qualités cristalline et électrique comparables à celles du silicium massif.Silicon homoepitaxial - layers have been deposited by ion beam sputtering, at relatively low substrate temperatures. The main results of this study are : growth rate proportionnal to the ion beam current, efficient doping element transfer from the target to the substrate, good layer smoothness. Growth conditions have been defined at which thin epitaxial layers (W ≈ 5000 Å) have crystallographic and electrical properties comparable to those of bulk silicon
Erratum - Elaboration de couches épitaxiées de silicium par pulvérisation ionique
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Cleaning of Si and GaAs Crystal Surfaces by Ion Bombardment in the 50–1500 eV Range: Influence of Bombarding Energy and Sample Temperature on Damage and Incorporation
Comparative Complexity of Emission Spectra from ICP, dc Arc, and Spark Excitation Sources
Study of high-spin structure of neutron-rich nuclei with A 100 produced by heavy-ion induced fission
High-spin structures observed in the Tc fission fragment - + Erratum Vol. 5, No 4, p. 445
High-spin structures observed in the Tc fission fragment
High-spin states have been studied in Tc produced
as a fission fragment in the reaction Yb + Si at 145 MeV.
Gamma rays were detected with the EUROGAM2 array. The level scheme of
Tc has been extended up to 4.2 MeV excitation energy and
several band structures are observed. Configurations are assigned to
two new bands on the basis of their behaviour and of cranked
Hartree-Fock-Bogolyubov calculations
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