Large two-level magnetoresistance effect in doped manganite grain boundary junctions

We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain boundary junctions formed in epitaxial La(2/3)Ca(1/3)MnO(3) films deposited on SrTiO(3) bicrystals. For magnetic fields H applied parallel to the grain boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The observed behavior is explained within a model of magnetic domain pinning at the grain boundary interface.Comment: 4 pages, 3 figures, to appear in Phys. Rev. B (Rapid Comm.

Superconductivity in epitaxial thin films of NaxCoO2 y D2O

The observation of superconductivity in the layered transition metal oxide NaxCoO2 y H2O (K. Takada et al., Nature 422, 53 (2003)) has caused a tremendous upsurge of scientific interest due to its similarities and its differences to the copper based high-temperature superconductors. Two years after the discovery, we report the fabrication of single-phase superconducting epitaxial thin films of Na0.3CoO2 x 1.3 D2O grown by pulsed laser deposition technique. This opens additional roads for experimental research exploring the superconducting state and the phase diagram of this unconventional material.Comment: 3 pages, 5 figure

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600 {\deg}C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC$_x$ surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO$_2$ thin films prepared and measured under identical conditions, the formation of HfC$_x$ was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating

Possible pseudogap behavior of electron doped high-temperature superconductors

We have measured the low-energy quasiparticle excitation spectrum of the electron doped high-temperature superconductors (HTS) Nd(1.85)Ce(0.15)CuO(4-y) and Pr(1.85)Ce(0.15)CuO(4-y) as a function of temperature and applied magnetic field using tunneling spectroscopy. At zero magnetic field, for these optimum doped samples no excitation gap is observed in the tunneling spectra above the transition temperature Tc. In contrast, below Tc for applied magnetic fields well above the resistively determined upper critical field, a clear excitation gap at the Fermi level is found which is comparable to the superconducting energy gap below Tc. Possible interpretations of this observation are the existence of a normal state pseudogap in the electron doped HTS or the existence of a spatially non-uniform superconducting state.Comment: 4 pages, 4 ps-figures included, to be published in Phys. Rev. B, Rapid Com

Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites

We have performed a systematic analysis of the voltage and temperature dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in the manganites. We find a strong decrease of the TMR with increasing voltage and temperature. The decrease of the TMR with increasing voltage scales with an increase of the inelastic tunneling current due to multi-step inelastic tunneling via localized defect states in the tunneling barrier. This behavior can be described within a three-current model for magnetic tunnel junctions that extends the two-current Julliere model by adding an inelastic, spin-independent tunneling contribution. Our analysis gives strong evidence that the observed drastic decrease of the GB-TMR in manganites is caused by an imperfect tunneling barrier.Comment: to be published in Europhys. Lett., 8 pages, 4 figures (included

Evidence for Surface Andreev Bound states in Cuprate Superconductors from Penetration Depth Measurements

Tunneling and theoretical studies have suggested that Andreev bound states form at certain surfaces of unconventional superconductors. Through studies of the temperature and field dependence of the in-plane magnetic penetration depth lambda_ab at low temperature, we have found strong evidence for the presence of these states in clean single crystal YBCO and BSCCO. Crystals cut to expose a [110] interface show a strong upturn in lambda_ab at around 7K, when the field is oriented so that the supercurrents flow around this surface. In YBCO this upturn is completely suppressed by a field of ~0.1 T.Comment: 4 pages 2 column revtex + 4 postscript figures. Submitted to PR

Subharmonic gap structure in d-wave superconductors

We present a self-consistent theory of current-voltage characteristics of d-wave/d-wave contacts at arbitrary transparency. In particular, we address the open problem of the observation of subharmonic gap structure (SGS) in cuprate junctions. Our analysis shows that: (i) the SGS is possible in d-wave superconductors, (ii) the existence of bound states within the gap results in an even-odd effect in the SGS, (iii) elastic scattering mechanisms, like impurities or surface roughness, may suppress the SGS, and (iv) in the presence of a magnetic field the Doppler shift of the Andreev bound states leads to a very peculiar splitting of the SGS, which is an unambiguous fingerprint of d-wave superconductivity.Comment: Revtex4, 4 pages, 5 figure

Phase-sensitive Evidence for d-wave Pairing Symmetry in Electron-doped Cuprate Superconductors

We present phase-sensitive evidence that the electron-doped cuprates Nd1.85Ce0.15CuO4-y (NCCO) and Pr1.85Ce0.15CuO4-y (PCCO) have d-wave pairing symmetry. This evidence was obtained by observing the half-flux quantum effect, using a scanning SQUID microscope, in c-axis oriented films of NCCO or PCCO epitaxially grown on tricrystal [100] SrTiO3 substrates designed to be frustrated for a d(x2-y2) order parameter. Samples with two other configurations, designed to b unfrustrated for a d-wave superconductor, do not show the half-flux quantum effect.Comment: 4 pages, Latex, 4 figure

ac Josephson effect in superconducting d-wave junctions

We study theoretically the ac Josephson effect in superconducting planar d-wave junctions. The insulating barrier assumed to be present between the two superconductors may have arbitrary strength. Many properties of this system depend on the orientation of the d-wave superconductor: we calculate the ac components of the Josephson current. In some arrangements there is substantial negative differential conductance due to the presence of mid-gap states. We study how robust these features are to finite temperature and also comment on how the calculated current-voltage curves compare with experiments. For some other configurations (for small barrier strength) we find zero-bias conductance peaks due to multiple Andreev reflections through midgap states. Moreover, the odd ac components are strongly suppressed and even absent in some arrangements. This absence will lead to a doubling of the Josephson frequency. All these features are due to the d-wave order parameter changing sign when rotated $90^{\circ}$. Recently, there have been several theoretical reports on parallel current in the d-wave case for both the stationary Josephson junction and for the normal metal-superconductor junction. Also in our case there may appear current density parallel to the junction, and we present a few examples when this takes place. Finally, we give a fairly complete account of the method used and also discuss how numerical calculations should be performed in order to produce current-voltage curves