16,571 research outputs found

    Contextual modeling of hand written Chinese character for recognition. I. A comparative study

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    A hand-written Chinese character off-line recognizer based on contextual modeling of 2D images has been constructed. Each character is modeled by a collection of regions and their contextual relations. A relaxation training algorithm of the model is now investigated. In addition, a mixture-region training algorithm considering each pixel as belonging to a mixture of regions instead of any particular one is studied.published_or_final_versio

    QCD corrections to polarization of J/\psi and \Upsilon at Fermilab Tevatron and CERN LHC

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    In this work, we present more detail of the calculation on the NLO QCD corrections to polarization of direct J/psi production via color singlet at Tevatron and LHC, as well as the results for Upsilon for the first time. Our results show that the J/psi polarization status drastically changes from transverse polarization dominant at LO into longitudinal polarization dominant in the whole range of the transverse momentum ptp_t of J/psi when the NLO corrections are counted. For Upsilon production, the p_t distribution of the polarization status behaves almost the same as that for J/psi except that the NLO result is transverse polarization at small p_t range. Although the theoretical evaluation predicts a larger longitudinal polarization than the measured value at Tevatron, it may provide a solution towards the previous large discrepancy for J/psi and Upsilon polarization between theoretical predication and experimental measurement, and suggests that the next important step is to calculate the NLO corrections to hadronproduction of color octet state J/psi^(8) and Upsilon^(8). Our calculations are performed in two ways, namely we do and do not analytically sum over the polarizations, and then check them with each other.Comment: 12 pages, 12 figures, two columns, use revtex4; to appear in PR

    Exchange Field-Mediated Magnetoresistance in the Correlated Insulator Phase of Be Films

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    We present a study of the proximity effect between a ferromagnet and a paramagnetic metal of varying disorder. Thin beryllium films are deposited onto a 5 nm-thick layer of the ferromagnetic insulator EuS. This bilayer arrangement induces an exchange field, HexH_{ex}, of a few tesla in low resistance Be films with sheet resistance Rβ‰ͺRQR\ll R_Q, where RQ=h/e2R_Q=h/e^2 is the quantum resistance. We show that HexH_{ex} survives in very high resistance films and, in fact, appears to be relatively insensitive to the Be disorder. We exploit this fact to produce a giant low-field magnetoresistance in the correlated insulator phase of Be films with R≫RQR\gg R_Q.Comment: To be published in Physical Review Letter
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