Mobility Degradation Influence on the SOI MOSFET Channel Length Extraction at 77 K

This work studies the influence of mobility degradation on the effective channel length Leff ( Leff= Lm-ΔL) extraction in submicron fully depleted SOI MOSFETs at 77 K. Second-order effects can cause mobility degradation, mainly at 77 K, and if standard techniques have been used, negative values of ΔL can be obtained. It will be shown that this result can be caused by a length-dependent mobility degradation factor

Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

This work studies the influence of the back gate voltage on the LDD SOI nMOSFETs series resistance at 300 K and 77 K and corresponding to two different buried oxide thicknesses. The MEDICI simulated results were used to support the analysis. It was observed that for lower buried oxide thickness the influence of the back gate bias is higher, mainly at 77 K. However, this influence becomes negligible when the back interface below the LDD region is inverted and the depletion region in the LDD reaches its maximum saturation value

Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

This work studies the influence of the back gate voltage on the LDD SOI nMOSFETs series resistance at 300 K and 77 K and corresponding to two different buried oxide thicknesses. the MEDICI simulated results were used to support the analysis. It was observed that for lower buried oxide thickness the influence of the back gate bias is higher, mainly at 77 K. However, this influence becomes negligible when the back interface below the LDD region is inverted and the depletion region in the LDD reaches its maximum saturation value.Universidade Federal de São Paulo, Lab Sistemas Integraveis, São Paulo, BrazilFac Tecnol São Paulo, São Paulo, BrazilIMEC, Louvain, BelgiumUniversidade Federal de São Paulo, Lab Sistemas Integraveis, São Paulo, BrazilWeb of Scienc