Mid-Infrared ultra-high-Q resonators based on fluoride crystalline materials

Decades ago, the losses of glasses in the near infrared (near-IR) were investigated in views of developments for optical telecommunications. Today, properties in the mid-infrared (mid-IR) are of interest for molecular spectroscopy applications. In particular, high-sensitivity spectroscopic techniques based on high-finesse mid-IR cavities hold high promise for medical applications. Due to exceptional purity and low losses, whispering gallery mode microresonators based on polished alkaline earth metal fluoride crystals (i.e the $\mathrm{XF_2}$ family, where X $=$ Ca, Mg, Ba, Sr,...) have attained ultra-high quality (Q) factor resonances (Q$>$10$^{8}$) in the near-IR and visible spectral ranges. Here we report for the first time ultra-high Q factors in the mid-IR using crystalline microresonators. Using an uncoated chalcogenide (ChG) tapered fiber, light from a continuous wave quantum cascade laser (QCL) is efficiently coupled to several crystalline microresonators at 4.4 $\mu$m wavelength. We measure the optical Q factor of fluoride crystals in the mid-IR using cavity ringdown technique. We observe that $\mathrm{MgF_2}$ microresonators feature quality factors that are very close to the fundamental absorption limit, as caused by the crystal's multiphonon absorption (Q$\sim$10$^{7}$), in contrast to near-IR measurements far away from these fundamental limits. Due to lower multiphonon absorption in $\mathrm{BaF_2}$ and $\mathrm{SrF_2}$, we show that ultra-high quality factors of Q $\geqslant$ 1.4 $\times 10^{8}$ can be reached at 4.4 $\mu$m. This corresponds to an optical finesse of $\mathcal{F}>$4$\cdot$ 10$^{4}$, the highest value achieved for any type of mid-IR resonator to date, and a more than 10-fold improvement over the state-of-the-art. Such compact ultra-high Q crystalline microresonators provide a route for narrow linewidth frequency-stabilized QCL or mid-IR Kerr comb generation.Comment: C. Lecaplain and C. Javerzac-Galy contributed equally to this wor

Excitonic Emission of Monolayer Semiconductors Near-Field Coupled to High-Q Microresonators.

We present quantum yield measurements of single layer WSe2 (1L-WSe2) integrated with high-Q ( Q > 106) optical microdisk cavities, using an efficient (η > 90%) near-field coupling scheme based on a tapered optical fiber. Coupling of the excitonic emission is achieved by placing 1L-WSe2 in the evanescent cavity field. This preserves the microresonator high intrinsic quality factor ( Q > 106) below the bandgap of 1L-WSe2. The cavity quantum yield is QYc ≈ 10-3, consistent with operation in the broad emitter regime (i.e., the emission lifetime of 1L-WSe2 is significantly shorter than the bare cavity decay time). This scheme can serve as a precise measurement tool for the excitonic emission of layered materials into cavity modes, for both in plane and out of plane excitation

Nano-Opto-Electro-Mechanical Systems

A new class of hybrid systems that couple optical, electrical and mechanical degrees of freedom in nanoscale devices is under development in laboratories worldwide. These nano-opto-electro-mechanical systems (NOEMS) offer unprecedented opportunities to dynamically control the flow of light in nanophotonic structures, at high speed and low power consumption. Drawing on conceptual and technological advances from cavity optomechanics, they also bear the potential for highly efficient, low-noise transducers between microwave and optical signals, both in the classical and quantum domains. This Progress Article discusses the fundamental physical limits of NOEMS, reviews the recent progress in their implementation, and suggests potential avenues for further developments in this field.Comment: 27 pages, 3 figures, 2 boxe

Quantum cascade laser-based Kerr frequency comb generation

We report mid-infrared Kerr comb generation based on a quantum cascade laser pumping a crystalline microresonator. For the first time QCL light is coupled into a microresonator via a tapered chalcogenide fiber allowing mid-IR Kerr comb generation

High-Q optical microresonators functionalized with two-dimensional material

© 2017 IEEE. We report the fiinctionalization of high-Q silica microdisks with WSe 2 and their optical characterization. Background-free cavity enhanced photoluminescence and photoluminescence saturation are observed at room temperature. We show precise measurements of the quantum yield of WSe 2

On-chip microwave-to-optical quantum coherent converter based on a superconducting resonator coupled to an electro-optic microresonator

We propose a device architecture capable of direct quantum coherent electro-optical conversion of microwave-to-optical photons. The hybrid system consists of a planar superconducting microwave circuit coupled to an integrated whispering-gallery-mode microresonator made from an electro-optical material. We show that by exploiting the large vacuum electric field of the planar microwave resonator, electro-optical (vacuum) coupling strengths g(0) as large as similar to 2 pi O(10 - 100) kHz are achievable with currently available technology-a more than 3 orders of magnitude improvement over prior designs and realizations. Operating at millikelvin temperatures, such a converter would enable high-efficiency conversion of microwave-to-optical photons. We analyze the added noise and show that maximum quantum coherent conversion efficiency is achieved for a multiphoton cooperativity of unity which can be reached with optical power as low as O(1) mW

Active photonic integrated circuits combining Si3N4 microresonators with 2D materials for applications in the visible wavelength range

© 2018 The Author(s). We present air-cladded silicon nitride microresonators at visible wavelengths compatible with 2D material transfer, fabricated using the photonic Damascene reflow process. Quality factors of 1 million have been measured at 765 nm

Low-loss integrated nanophotonic circuits with layered semiconductor materials

Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, the optical losses of the PICs are critical. In contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss integrated platform with a wide transparency window from ultraviolet to mid-infrared and absence of two-photon absorption at telecommunication bands. Moreover, it is suitable for nonlinear integrated photonics due to its high Kerr nonlinearity and high-power handing capability. These features of Si3N4 are intrinsically beneficial for nanophotonics and optoelectronics applications. Here we report a low-loss integrated platform incorporating monolayer molybdenum ditelluride (1L-MoTe2) with Si3N4 photonic microresonators. We show that, with the 1L-MoTe2, microresonator quality factors exceeding 3 million in the telecommunication O-band to E-band are maintained. We further investigate the change of microresonator dispersion and resonance shift due to the presence of 1L-MoTe2, and extrapolate the optical loss introduced by 1L-MoTe2 in the telecommunication bands, out of the excitonic transition region. Our work presents a key step for low-loss, hybrid PICs with layered semiconductors without using heterogeneous wafer bonding

Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials

Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers with silicon nitride photonic microresonators. We achieve microresonator quality factors >3*10^6 in the telecommunication O- to E-bands. This paves the way for low-loss, hybrid photonic integrated circuits with layered semiconductors, not requiring heterogeneous wafer bonding