Electrical Investigation of the Oblique Hanle Effect in Ferromagnet/Oxide/Semiconductor Contacts

We have investigated the electrical Hanle effect with magnetic fields applied at an oblique angle ({\theta}) to the spin direction (the oblique Hanle effect, OHE) in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal measurement scheme. The electrical oblique Hanle signals obtained in CoFe/MgO/Si and CoFe/MgO/Ge contacts show clearly different line shapes depending on the spin lifetime of the host SC. Notably, at moderate magnetic fields, the asymptotic values of the oblique Hanle signals (in both contacts) are consistently reduced by a factor of cos^2({\theta}) irrespective of the bias current and temperature. These results are in good agreement with predictions of the spin precession and relaxation model for the electrical oblique Hanle effect. At high magnetic fields where the magnetization of CoFe is significantly tilted from the film plane to the magnetic field direction, we find that the observed angular dependence of voltage signals in the CoFe/MgO/Si and CoFe/MgO/Ge contacts are well explained by the OHE, considering the misalignment angle between the external magnetic field and the magnetization of CoFe.Comment: 19 pages, 8 figure

Semiconductor integrated circuit chip, multilayer chip capacitor and semiconductor integrated circuit chip package

Disclosed are a semiconductor integrated circuit chip, a multilayer chip capacitor, and a semiconductor integrated circuit chip package. The semiconductor integrated circuit chip includes a semiconductor integrated circuit chip body, an input/output terminal disposed on the outside of the semiconductor integrated circuit chip body, and a decoupling capacitor disposed at a side face of the semiconductor integrated circuit chip body and electrically connected to the input/output terminal. The semiconductor integrated circuit chip cab be obtained, which can maintain an impedance of a power distribution network below a target impedance in a wide frequency range, particularly at a high frequency, by minimizing an inductance between a decoupling capacitor and a semiconductor integrated circuit chip

Quantitative agreement of Dzyaloshinskii-Moriya interactions for domain-wall motion and spin-wave propagation

The magnetic exchange interaction is the one of the key factors governing the basic characteristics of magnetic systems. Unlike the symmetric nature of the Heisenberg exchange interaction, the interfacial Dzyaloshinskii-Moriya interaction (DMI) generates an antisymmetric exchange interaction which offers challenging opportunities in spintronics with intriguing antisymmetric phenomena. The role of the DMI, however, is still being debated, largely because distinct strengths of DMI have been measured for different magnetic objects, particularly chiral magnetic domain walls (DWs) and non-reciprocal spin waves (SWs). In this paper, we show that, after careful data analysis, both the DWs and SWs experience the same strength of DMI. This was confirmed by spin-torque efficiency measurement for the DWs, and Brillouin light scattering measurement for the SWs. This observation, therefore, indicates the unique role of the DMI on the magnetic DW and SW dynamics and also guarantees the compatibility of several DMI-measurement schemes recently proposed.Comment: 24 pages, 5 figure

Synthesis of Gold Nanoparticle with Aqueous Carbon Nano Colloid under Ultrasonication and Self-Assembled Carbon-Gold Nanoparticle Multilayer Films

The preparation of gold nanoparticle showed in carbon nano colloid under ultrasonic irradiation. The products of gold nanoparticle were well dispersed in carbon nano colloid investigated by UV-vis., SEM, TEM, EDX, and XRD spectra. Carbon nano colloid – gold nanoparticle films were self-assembled on the reactive surface of glass slides functionalized with 3-aminopropyltrimethoxysilane. Also, the self-assembled nanoparticle films were characterized using UV-vis. spectra