Calibrating lateral displacement sensitivity of AFM by stick-slip on stiff, amorphous surfaces

We calibrate the lateral mode AFM (LFM) by determining the position-sensitive photodetector (PSPD) signal dependency on the lateral tip displacement, which is analogous to the constant-compliance region in normal-force calibration. By stick-slip on stiff, amorphous surfaces (silica or glass), the lateral tip displacement is determined accurately using the feedback loop control of AFM system. The sufficiently high contact stiffness between the Si AFM tip and stiff, amorphous surfaces substantially reduces the error of PSPD signal dependency on the lateral tip displacement. No damage or modification of the AFM probe is involved and only a clean silicon or glass wafer is needed.Accepted Author ManuscriptOLD ChemE/Organic Materials and InterfacesChemE/O&O groe

How Deep Hole Traps Affect the Charge Dynamics and Collection in Bare and Bilayers of Methylammonium Lead Bromide

Wide-band-gap perovskites such as methylammonium lead bromide (MAPB) are promising materials for tandem solar cells because of their potentially high open-circuit voltage, which is yet still far below the maximum limit. The relatively short charge-carrier lifetimes deduced from time-resolved photoluminescence (TRPL) measurements seem in strong contrast with the long lifetimes observed with time-resolved photoconductance measurements. This is explained by a large amount of hole defect states, NT > 1016 cm-3, in spin-coated layers of MAPB residing at or near the grain boundaries. The introduction of hypophosphorous acid (HPA) increases the average grain size by a factor of 3 and reduces the total concentration of the trap states by a factor of 10. The introduction of HPA also increases the fraction of initially generated holes that undergo charge transfer to the selective contact, Spiro-OMeTAD (SO), by an order of magnitude. In contrast to methylammonium lead iodide (MAPI)/SO bilayers, a reduction of the carrier lifetime is observed in MAPB/SO bilayers, which is attributed to the fact that injected holes undergo interfacial recombination via these trap states. Our findings provide valuable insight into the optoelectronic properties of bromide-containing lead halide perovskites essential for designing efficient tandem solar cells.ChemE/Opto-electronic MaterialsChemE/O&O groe

Charge distribution in CsFAPbI₃ spatially resolved by scanning microwave impedance microscopy

Metal-halide perovskites deposited by wet-chemical deposition have demonstrated great potential for various electronic applications, including solar cells. A remaining question is how light-induced excess charges become distributed over such polycrystalline material. Here, we examine the local conductive properties of MAPbI3 and CsFAPbI3 by using scanning microwave microscopy (sMIM) in the dark and light. sMIM is an atomic force microscopy (AFM)-based technique measuring variations of the in-phase and out-of-phase signals due to changes in the tip-sample interaction, yielding MIM-Re and MIM-Im images, respectively. Combining this information leads to a picture for CsFAPbI3 in which excess charges are distributed evenly over the grains, but due to local defect-rich areas, possibly related to different crystal facets, local perturbations in carrier concentration exist. For solar cells, this distribution in carrier concentration under illumination leads to variation in the local Fermi level splitting, which should be suppressed to reduce the voltage deficit.ChemE/Opto-electronic MaterialsChemE/O&O groe