Reduced basis method for computational lithography

A bottleneck for computational lithography and optical metrology are long computational times for near field simulations. For design, optimization, and inverse scatterometry usually the same basic layout has to be simulated multiple times for different values of geometrical parameters. The reduced basis method allows to split up the solution process of a parameterized model into an expensive offline and a cheap online part. After constructing the reduced basis offline, the reduced model can be solved online very fast in the order of seconds or below. Error estimators assure the reliability of the reduced basis solution and are used for self adaptive construction of the reduced system. We explain the idea of reduced basis and use the finite element solver JCMsuite constructing the reduced basis system. We present a 3D optimization application from optical proximity correction (OPC).Comment: BACUS Photomask Technology 200

Numerical analysis of nanostructures for enhanced light extraction from OLEDs

Nanostructures, like periodic arrays of scatters or low-index gratings, are used to improve the light outcoupling from organic light-emitting diodes (OLED). In order to optimize geometrical and material properties of such structures, simulations of the outcoupling process are very helpful. The finite element method is best suited for an accurate discretization of the geometry and the singular-like field profile within the structured layer and the emitting layer. However, a finite element simulation of the overall OLED stack is often beyond available computer resources. The main focus of this paper is the simulation of a single dipole source embedded into a twofold infinitely periodic OLED structure. To overcome the numerical burden we apply the Floquet transform, so that the computational domain reduces to the unit cell. The relevant outcoupling data are then gained by inverse Flouqet transforming. This step requires a careful numerical treatment as reported in this paper

A Rigorous Finite-Element Domain Decomposition Method for Electromagnetic Near Field Simulations

Rigorous computer simulations of propagating electromagnetic fields have become an important tool for optical metrology and design of nanostructured optical components. A vectorial finite element method (FEM) is a good choice for an accurate modeling of complicated geometrical features. However, from a numerical point of view solving the arising system of linear equations is very demanding even for medium sized 3D domains. In numerics, a domain decomposition method is a commonly used strategy to overcome this problem. Within this approach the overall computational domain is split up into smaller domains and interface conditions are used to assure continuity of the electromagnetic field. Unfortunately, standard implementations of the domain decomposition method as developed for electrostatic problems are not appropriate for wave propagation problems. In an earlier paper we therefore proposed a domain decomposition method adapted to electromagnetic field wave propagation problems. In this paper we apply this method to 3D mask simulation.Comment: 9 pages, 7 figures, SPIE conference Advanced Lithography / Optical Microlithography XXI (2008

Postnatal depression and reproductive success in modern, low-fertility contexts

Background and objectives: Postnatal depression (PND) presents a puzzling phenomenon to evolutionary anthropologists as it is highly prevalent and yet detrimental to child development and maternal health. Adaptive explanations have been proposed, but have not been tested with data that directly link PND to female fertility. Methodology: A survey was designed to gather complete reproductive histories and retrospective measures of PND to measure the effects of PND on fitness. Respondents were born between 1930 and 1967, with the majority based in the UK during their childrearing years. The hypothesis that PND is detrimental to fitness is assessed using Mann–Whitney U tests on completed fertility. Binary logistic regression modelling is used to test the hypothesis that PND reduces the likelihood of parity progression. Results: Women experiencing PND at their first or second birth have lower completed fertility, with PND at the first birth leading to lowered fertility. Logistic regression analyses show that this is the result of reductions in the likelihood of parity progression to a third birth when PND is experienced at the first birth or when repeat bouts occur. Conclusions and implications: Our results call into question adaptationist arguments, contribute to the growing understanding of the importance of emotional wellbeing to fertility decision making, and given the economic consequences of markedly below replacement fertility, highlight a potential new source of financial incentive to invest in screening and preventative measures to ensure good maternal mental health

Rigorous Simulations of 3D Patterns on Extreme Ultraviolet Lithography Masks

Simulations of light scattering off an extreme ultraviolet lithography mask with a 2D-periodic absorber pattern are presented. In a detailed convergence study it is shown that accurate results can be attained for relatively large 3D computational domains and in the presence of sidewall-angles and corner-roundings.Comment: SPIE Europe Optical Metrology, Conference Proceeding

Finite-Element Simulations of Light Propagation through Circular Subwavelength Apertures

Light transmission through circular subwavelength apertures in metallic films with surrounding nanostructures is investigated numerically. Numerical results are obtained with a frequency-domain finite-element method. Convergence of the obtained observables to very low levels of numerical error is demonstrated. Very good agreement to experimental results from the literature is reached, and the utility of the method is demonstrated in the investigation of the influence of geometrical parameters on enhanced transmission through the apertures

Metrology of EUV Masks by EUV-Scatterometry and Finite Element Analysis

Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production process. A prerequisite to meet the high quality requirements for these EUV masks is a simple and accurate method for absorber pattern profile characterization. In our previous work we demonstrated that the Finite Element Method (FEM) is very well suited for the simulation of EUV scatterometry and can be used to reconstruct EUV mask profiles from experimental scatterometric data. In this contribution we apply an indirect metrology method to periodic EUV line masks with different critical dimensions (140 nm and 540 nm) over a large range of duty cycles (1:2, ..., 1:20). We quantitatively compare the reconstructed absorber pattern parameters to values obtained from direct AFM and CD-SEM measurements. We analyze the reliability of the reconstruction for the given experimental data. For the CD of the absorber lines, the comparison shows agreement of the order of 1nm. Furthermore we discuss special numerical techniques like domain decomposition algorithms and high order finite elements and their importance for fast and accurate solution of the inverse problem.Comment: Photomask Japan 2008 / Photomask and Next-Generation Lithography Mask Technology X