Large radius exciton in single-walled carbon nanotubes

The spectrum of large radius exciton in an individual semiconducting single-walled carbon nanotube (SWCNT) is described within the framework of elementary potential model, in which exciton is modeled as bound state of two oppositely charged quasi-particles confined on the tube surface. Due to the parity of the interaction potential the exciton states split into the odd and even series. It is shown that for the bare and screened Coulomb electron-hole (e-h) potentials the binding energy of even excitons in the ground state well exceeds the energy gap. The factors preventing the collapse of single-electron states in isolated semiconducting SWCNTs are discussed.Comment: 14 pages, 1 figure, 5 table

Modeling and simulation of bulk gallium nitride power semiconductor devices

Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range