Three-dimensional nanoimprint lithography using two-photon lithography master samples

We demonstrate three-dimensional (3-D) nanoimprint lithography using master samples initially structured by two-photon lithography. Complex geometries like micro prisms, micro parabolic concentrators, micro lenses and other micrometer sized objects with nanoscale features are three-dimensionally fabricated using two-photon lithography. Stamps made out of polydimethylsiloxane are then cast using the two-photon lithographically structured samples as master samples. Hereby, expensive serial nano 3-D printing is transformed into scalable parallel 3-D nanoimprint lithography. Furthermore, the transition from two-photon lithography to imprint lithography increases the freedom in substrate and ink choice significantly. We demonstrate printing on textured surfaces as well as residue-free printing with silver ink using capillary action

Near-Unity Unselective Absorption in Sparse InP Nanowire Arrays

We experimentally demonstrate near-unity, unselective absorption, broadband, angle-insensitive, and polarization-independent absorption, in sparse InP nanowire arrays, embedded in flexible polymer sheets via geometric control of waveguide modes in two wire motifs: (i) arrays of tapered wires and (ii) arrays of nanowires with varying radii. Sparse arrays of these structures exhibit enhanced absorption due to strong coupling into the first order azimuthal waveguide modes of individual nanowires; wire radius thus controls the spectral region of the absorption enhancement. Whereas arrays of cylindrical wires with uniform radius exhibit narrowband absorption, arrays of tapered wires and arrays with multiple wire radii expand this spectral region and achieve broadband absorption enhancement. Herein, we present an economic, top-down lithographic/etch fabrication method that enables fabrication of multiple InP nanowire arrays from a single InP wafer with deliberate control of nanowire radius and taper. Using this method, we create sparse tapered and multiradii InP nanowire arrays and demonstrate optical absorption that is broadband (450–900 nm), angle-insensitive, and near-unity (>90%) in roughly 100 nm planar equivalence of InP. These highly absorbing sparse nanowire arrays represent a promising approach to flexible, high efficiency optoelectronic devices, such as photodetectors, solar cells, and photoelectrochemical devices

Spectrally Matched Quantum Dot Photoluminescence in GaAs-Si Tandem Luminescent Solar Concentrators

Luminescent solar concentrators (LSCs) can capture both direct and diffuse irradiance via isotropic absorption of waveguide-embedded luminophores. Additionally, LSCs have the potential to reduce the overall cost of a photovoltaic (PV) module by concentrating incident irradiance onto an array of smaller cells. Historically, LSC efficiencies have suffered in part from incomplete light absorption and non-unity quantum yield (QY) of the luminophores. Inorganic quantum dot (QD) luminophores allow the spectral tuning of the absorption and photoluminescence bands, and have near-unity QYs. In a four-terminal tandem LSC module scheme, visible light is trapped within the LSC waveguide and is converted by GaAs cells, and near infrared light is optically coupled to a Si subcell. Here, we investigate the efficiency of a GaAs/Si tandem LSC as a function of luminophore absorption edge and emission wavelength for QD luminophores dispersed in an LSC waveguide with embedded, coplanar GaAs cells. We find that positioning the luminophore absorption edge at 660 nm yields a maximum module power efficiency of approximately 26%, compared with 21% for the non-optimized luminophore and 19% for the bare Si cases

High Spectral Resolution Plasmonic Color Filters with Subwavelength Dimensions

Rapid advances in image sensor technology have generated a mismatch between the small size of image sensor pixels and the achievable filter spectral resolution. This mismatch has prevented the realization of chip-based image sensors with simultaneously high spatial and spectral resolution. We report here a concept that overcomes this trade-off, enabling high spectral resolution (transmission FWHM <31 nm) filters with subwavelength dimensions operating at optical and near-infrared wavelengths. An inverse design methodology was used to realize a new type of plasmonic cavity that efficiently couples an in-plane Fabry–Perot resonator to a single plasmonic slit that supports surface plasmon polaritons. This design principle, combined with a new metal imprinting method that yields metallic nanostructures with both top and bottom surfaces that are extremely smooth, enabled demonstration of high spectral resolution transmission filters with smaller area than any previously reported

Photonic Crystal Waveguides for >90% Light Trapping Efficiency in Luminescent Solar Concentrators

Luminescent solar concentrators are currently limited in their potential concentration factor and solar conversion efficiency by the inherent escape cone losses present in conventional planar dielectric waveguides. We demonstrate that photonic crystal slab waveguides tailored for luminescent solar concentrator applications can exhibit >90% light trapping efficiency. This is achieved by use of quantum dot luminophores embedded within the waveguide that absorb light at photon energies corresponding to photonic crystal leaky modes that couple to incoming sunlight. The luminophores then emit at lower photon energies into photonic crystal bound modes that enable highly efficient light trapping in slab waveguides of wavelength-scale thickness. Photonic crystal waveguides thus nearly eliminate escape cone losses, and overcome the performance limitations of previously proposed wavelength-selective dielectric multilayer filters. We describe designs for hole-array and rod-array photonic crystals comprised of hydrogenated amorphous silicon carbide using CdSe/CdS quantum dots. Our analysis suggests that photonic crystal waveguide luminescent solar concentrators using these materials these can achieve light trapping efficiency above 92% and a concentration factor as high as 100

Effectively Transparent Front Contacts for Optoelectronic Devices

Effectively transparent front contacts for optoelectronic devices achieve a measured transparency of up to 99.9% and a measured sheet resistance of 4.8 Ω sq^(−1). The 3D microscale triangular cross-section grid fingers redirect incoming photons efficiently to the active semiconductor area and can replace standard grid fingers as well as transparent conductive oxide layers in optoelectronic devices

Micro-optical Tandem Luminescent Solar Concentrators

Traditional concentrating photovoltaic (CPV) systems utilize multijunction cells to minimize thermalization losses, but cannot efficiently capture diffuse sunlight, which contributes to a high levelized cost of energy (LCOE) and limits their use to geographical regions with high direct sunlight insolation. Luminescent solar concentrators (LSCs) harness light generated by luminophores embedded in a light-trapping waveguide to concentrate light onto smaller cells. LSCs can absorb both direct and diffuse sunlight, and thus can operate as flat plate receivers at a fixed tilt and with a conventional module form factor. However, current LSCs experience significant power loss through parasitic luminophore absorption and incomplete light trapping by the optical waveguide. Here we introduce a tandem LSC device architecture that overcomes both of these limitations, consisting of a PLMA polymer layer with embedded CdSe/CdS quantum dot (QD) luminophores and InGaP micro-cells, which serve as a high bandgap absorber on top of a conventional Si photovoltaic. We experimentally synthesize CdSe/CdS QDs with exceptionally high quantum-yield (99%) and ultra-narrowband emission optimally matched to fabricated III-V InGaP micro-cells. Using a Monte Carlo ray-tracing model, we show the radiative limit power conversion efficiency for a module with these components to be 30.8% diffuse sunlight conditions. These results indicate that a tandem LSC-on-Si architecture could significantly improve upon the efficiency of a conventional Si photovoltaic module with simple and straightforward alterations of the module lamination steps of a Si photovoltaic manufacturing process, with promise for widespread module deployment across diverse geographical regions and energy markets

Spectrally Matched Quantum Dot Photoluminescence in GaAs-Si Tandem Luminescent Solar Concentrators

Luminescent solar concentrators (LSCs) can capture both direct and diffuse irradiance via isotropic absorption of waveguide-embedded luminophores. Additionally, LSCs have the potential to reduce the overall cost of a photovoltaic (PV) module by concentrating incident irradiance onto an array of smaller cells. Historically, LSC efficiencies have suffered in part from incomplete light absorption and non-unity quantum yield (QY) of the luminophores. Inorganic quantum dot (QD) luminophores allow the spectral tuning of the absorption and photoluminescence bands, and have near-unity QYs. In a four-terminal tandem LSC module scheme, visible light is trapped within the LSC waveguide and is converted by GaAs cells, and near infrared light is optically coupled to a Si subcell. Here, we investigate the efficiency of a GaAs/Si tandem LSC as a function of luminophore absorption edge and emission wavelength for QD luminophores dispersed in an LSC waveguide with embedded, coplanar GaAs cells. We find that positioning the luminophore absorption edge at 660 nm yields a maximum module power efficiency of approximately 26%, compared with 21% for the non-optimized luminophore and 19% for the bare Si cases