Optimization of the Asymmetric Intermediate Reflector Morphology for High Stabilized Efficiency Thin n-i-p Micromorph Solar Cells

This paper focuses on our latest progress in n-i-p thinmicromorph solar-cell fabrication using textured back reflectors and asymmetric intermediate reflectors, both deposited by lowpressure chemical vapor deposition of zinc oxide.We then present microcrystalline bottom cells with high crystallinity, which yield excellent long wavelength response for relatively thin absorber thickness. In a 1.5-μm-thick μc-Si:H single-junction n-i-p solar cell, we thus obtain a short-circuit current density of 25.9 mA·cm−2 , resulting in an initial cell efficiency of 9.1%. Subsequently, the roughness of the intermediate reflector layer is adapted for the growth of high-performance amorphous silicon (a-Si:H) top cells. Combining bottom cells with high current, an optimal intermediate reflector morphology and a 0.22-μm-thick a-Si:H top cell, we reach high initial open-circuit voltages of 1.45 V, and we obtain a stabilized cell with an efficiency of 11.1%, which is our best stable efficiency for n-i-p solar cells

On the Interplay Between Microstructure and Interfaces in High-Efficiency Microcrystalline Silicon Solar Cells

This paper gives new insights into the role of both the microstructure and the interfaces in microcrystalline silicon (μc- Si) single-junction solar cells. A 3-D tomographic reconstruction of a μc-Si solar cell reveals the 2-D nature of the porous zones, which can be present within the absorber layer. Tomography thus appears as a valuable technique to provide insights into the μc- Si microstructure. Variable illumination measurements enable to study the negative impact of such porous zones on solar cells performance. The influence of such defectivematerial can bemitigated by suitable cell design, as discussed here. Finally, a hydrogen plasma cell post-deposition treatment is demonstrated to improve solar cells performance, especially on rough superstrates, enabling us to reach an outstanding 10.9% efficiency microcrystalline singlejunction solar cell

Light Harvesting Schemes for High Efficiency Thin Film Silicon Solar Cells

In Thin Film Silicon (TF-Si) solar cells light harvesting schemes must guarantee an efficient light trapping in the thin absorber layers without decreasing the silicon layers quality and consecutively the p-i-n diodes electrical performance. TF-Si solar cells resilience to the substrate roughness is reported to be possibly improved through optimizations of the cell design and of the silicon deposition processes. By further tailoring the superstrate texture, amorphous silicon / microcrystalline silicon (a-Si:H/mu c-Si:H) tandem solar cells with an initial efficiency up to 13.7 % and a stabilized efficiency up to 11.8 % are demonstrated on single-scale textured superstrates. An alternative approach combining large and smooth features nanoimprinted onto a transparent lacquer with small and sharp textures from as-grown LPCVD ZnO is then shown to have a high potential for further increasing TF-Si devices efficiency. First results demonstrate up to 14.1 % initial efficiency for a TF-Si tandem solar cell

Post-deposition treatment of microcrystalline silicon solar cells for improved performance on rough superstrates

In this contribution, we investigate the effect of post-deposition treatments on finished non-encapsulated thin-film microcrystalline silicon solar cells and show that annealing in vacuum leads to improved electrical properties of the solar cells, particularly for cells deposited on rough super strates. Our results suggest that both curing of intrinsic defects in the silicon, which can appear during the deposition of the ZnO back electrode, as well as an improvement of the ZnO back-electrode conductivity itself, occur during an annealing in vacuum, leading to large improvements of the open-circuit voltage and fill factor values. An improvement of the porous zones in the absorber layer, as induced by rough superstrates, is also observed by Fourier-transform photocurrent spectroscopy, implying that these porous zones cannot be considered as being purely bi-dimensional, but have a spatial extension within the absorber layer. (C) 2014 AIP Publishing LLC

Silicon oxide buffer layer at the p-i interface in amorphous and microcrystalline silicon solar cells

The use of intrinsic silicon oxide as a buffer layer at the p-i interface of thin-film silicon solar cells is shown to provide significant advantages. For microcrystalline silicon solar cells, when associated with highly crystalline i-layers deposited at high rates, all electrical parameters are improved. Larger efficiency gains are achieved with substrates of increased roughness. For cells with an improved i-layer material quality, there is mainly a gain in short-circuit current density. An improvement in carrier collection in the blue region of the spectrum is systematically observed on all the cells. The presence of a silicon oxide buffer layer also promotes the nucleation of the subsequent intrinsic microcrystalline silicon layer. In amorphous silicon solar cells, the silicon oxide buffer layer is proven to act as an efficient barrier to boron cross-contamination, eliminating the need for additional processing steps (e.g. water vapor flush), while providing a wide bandgap material at the interface. The implementation of silicon oxide buffer layers for both types of cells thus provides a decisive improvement, as it allows extremely fast deposition of the full p-i-n stack of layers of the cell in a single-chamber configuration while providing a high-quality substrate-resilient p-i interface. (C) 2013 Elsevier B.V. All rights reserved

High-Stable-Efficiency Tandem Thin-Film Silicon Solar Cell With Low-Refractive-Index Silicon-Oxide Interlayer

We report the recent advances and key requirements for high-efficiency "micromorph" tandem thin-film silicon solar cells composed of an amorphous silicon top cell and a microcrystalline silicon bottom cell. The impact of inserting a low-refractive-index silicon-oxide (SiOx) film as intermediate reflecting layer (IRL) is highlighted. We show that refractive indexes as low as 1.75 can be obtained for layers still conducting enough to be implemented in solar cells, and without no additional degradation. This allows for high top-cell current densities with thin top cells, enabling low degradation rates. A micromorph cell with a certified efficiency of 12.63% (short-circuit current density of 12.8 mA/cm(2)) is obtained for an optimized stack. Furthermore, short-circuit current densities as high as 15.9 mA/cm(2) are reported in the amorphous silicon top-cell of micromorph devices by combining a 150-nm- thick SiOx-based IRL and a textured antireflecting coating at the air-glass interface

Geometric light trapping for high efficiency thin film silicon solar cells

The imprinting of random square based pyramidal textures with micrometric scale at the air/glass interface of thin film silicon solar cells is presented as an efficient alternative to anti-reflective coatings to minimize reflection losses at the cell entrance. This novel processing step, which can be applied after cell or module manufacture, is found to simultaneously enhance light in-coupling and light-trapping in amorphous silicon/microcrystalline silicon tandem solar cells. A remarkable total current gain of more than 5% is demonstrated with the imprinting of such structures, resulting in a tandem cell with a high initial efficiency of 13% for a total absorber layer thickness below 1.5 mu m. (C) 2011 Elsevier B.V. All rights reserved

Silicon Filaments in Silicon Oxide for Next-Generation Photovoltaics

Nanometer wide silicon filaments embedded in an amorphous silicon oxide matrix are grown at low temperatures over a large area. The optical and electrical properties of these mixed-phase nanomaterials can be tuned independently, allowing for advanced light management in high efficiency thin-film silicon solar cells and for band-gap tuning via quantum confinement in third-generation photovoltaics

Optimization of thin film silicon solar cells on highly textured substrates

Doped layers made of nanostructured silicon phases embedded in a silicon oxide matrix were implemented in thin film silicon solar cells. Their combination with optimized deposition processes for the silicon intrinsic layers is shown to allow for an increased resilience of the cell design to the substrate texture, with high electrical properties conserved on rough substrates. The presented optimizations thus permit turning the efficient light trapping provided by highly textured front electrodes into increased cell efficiencies, as reported for single junction cells and for amorphous silicon (a-Si)/microcrystalline silicon tandem cells. Initial and stabilized efficiencies of 12.7 and 11.3%, respectively, are reported for such tandem configuration implementing a 1.1 mu m thick microcrystalline silicon bottom cell