Slow antiferromagnetic dynamics in the low temperature tetragonal phase of La_{2-x}Sr_xCuO_4 as revealed by ESR of Gd spin probes

Measuring the ESR of Gd spin probes we have studied the magnetic properties of the copper oxide planes in the low temperature tetragonal (LTT) phase of Eu doped La_{2-x}Sr_xCuO_4. The data give evidence that at particular levels of Sr and Eu doping the frequency of the antiferromagnetic fluctuations in the LTT phase dramatically decreases at low temperatures by almost three orders of magnitude. However, no static magnetic order has been found for T>8K in contrast to the observation by neutron scattering of stripe ordering of spins below 50K in a Nd doped La_{2-x}Sr_xCuO_4 single crystal. To our opinion static order in the Nd doped compound is induced due to the interaction between the Cu spins with the rare earth magnetic moments. Therefore, a really characteristic property of the magnetism in the LTT structural phase may be not static magnetic order at elevated temperatures but rather extremely slow antiferromagnetic dynamics.Comment: 12 pages RevTex, 2 EPS figures, to appear in Phys.Rev.B, Feb.,9

Revisiting and modeling the magnetism of hole-doped CuO_2 spin chains in Sr{14-x}Ca_xCu_{24}O_{41}

Magnetization measurements of Sr{14-x}Ca_xCu_{24}O_{41} with 0 <= x <=12 in magnetic fields up to 16 T show that the low-temperature magnetic response of the CuO_2 spin chains changes strongly upon Ca doping. For x=0 quantum statistical simulations yield that the temperature and field dependence of the magnetization can be well described by an effective Heisenberg model in which the ground state configuration is composed of spin dimers, trimers, and monomers. For x>0 a constant contribution to the low-temperature magnetic susceptibility is observed which cannot be explained in terms of simple chain models. Alternative scenarios are outlined.Comment: 2 pages, submitted to the proceedings of the ICM, Kyoto, Japan, August 200

Ising magnets with mobile defects

Motivated by recent experiments on cuprates with low-dimensional magnetic interactions, a new class of two-dimensional Ising models with short-range interactions and mobile defects is introduced and studied. The non-magnetic defects form lines, which, as temperature increases, first meander and then become unstable. Using Monte Carlo simulations and analytical low- and high-temperature considerations, the instability of the defect stripes is monitored for various microscopic and thermodynamic quantities in detail for a minimal model, assuming some of the couplings to be indefinitely strong. The robustness of the findings against weakening the interactions is discussed as well

Preferential antiferromagnetic coupling of vacancies in graphene on SiO_2: Electron spin resonance and scanning tunneling spectroscopy

Monolayer graphene grown by chemical vapor deposition and transferred to SiO_2 is used to introduce vacancies by Ar^+ ion bombardment at a kinetic energy of 50 eV. The density of defects visible in scanning tunneling microscopy (STM) is considerably lower than the ion fluence implying that most of the defects are single vacancies. The vacancies are characterized by scanning tunneling spectroscopy (STS) on graphene and HOPG exhibiting a peak close to the Fermi level. The peak persists after air exposure up to 180 min, albeit getting broader. After air exposure for less than 60 min, electron spin resonance (ESR) at 9.6 GHz is performed. For an ion flux of 10/nm^2, we find a signal corresponding to a g-factor of 2.001-2.003 and a spin density of 1-2 spins/nm^2. The ESR signal consists of a mixture of a Gaussian and a Lorentzian of equal weight exhibiting a width down to 0.17 mT, which, however, depends on details of the sample preparation. The g-factor anisotropy is about 0.02%. Temperature dependent measurements reveal antiferromagnetic correlations with a Curie-Weiss temperature of -10 K. Albeit the electrical conductivity of graphene is significantly reduced by ion bombardment, the spin resonance induced change in conductivity is below 10^{-5}.Comment: 10 pages, 5 figures, discussion on STM images in the literature of defects in graphene adde

Photoemission induced gating of topological insulator

The recently discovered topological insulators exhibit topologically protected metallic surface states which are interesting from the fundamental point of view and could be useful for various applications if an appropriate electronic gating can be realized. Our photoemission study of Cu intercalated Bi2Se3 shows that the surface states occupancy in this material can be tuned by changing the photon energy and understood as a photoemission induced gating effect. Our finding provides an effective tool to investigate the new physics coming from the topological surface states and suggests the intercalation as a recipe for synthesis of the material suitable for electronic applications.Comment: + resistivity data and some discussio

Resistivity and Hall effect of LiFeAs: Evidence for electron-electron scattering

LiFeAs is unique among the broad family of FeAs-based superconductors, because it is superconducting with a rather large $T_c\simeq 18$ K under ambient conditions although it is a stoichiometric compound. We studied the electrical transport on a high-quality single crystal. The resistivity shows quadratic temperature dependence at low temperature giving evidence for strong electron-electron scattering and a tendency towards saturation around room temperature. The Hall constant is negative and changes with temperature, what most probably arises from a van Hove singularity close to the Fermi energy in one of the hole-like bands. Using band structure calculations based on angular resolved photoemission spectra we are able to reproduce all the basic features of both the resistivity as well as the Hall effect data.Comment: 6 pages, 3 figures included; V2 has been considerably revised and contain a more detailed analysis of the Hall effect dat