Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect profile. The SiO2/Si interface in the UTB-SOI was well characterized, and a good estimation of its depth has been obtained. The chemical analysis indicates that the interface does not contain defects, but only strongly localized charged centers. In order to promote the relaxation, the samples have been submitted to a post-growth annealing treatment in vacuum. After this treatment, it was possible to observe the modifications of the defect structure of the relaxed film. Chemical analysis of the SiGe layers suggests a prevalent trapping site surrounded by germanium atoms, presumably Si vacancies associated with misfit dislocations and threading dislocations in the SiGe films

High-resolution MCP-TimePix3 imaging/timing detector for antimatter physics

We present a hybrid imaging/timing detector for force sensitive inertial measurements designed for measurements on positronium, the metastable bound state of an electron and a positron, but also suitable for applications involving other low intensity, low energy beams of neutral (antimatter)-atoms, such as antihydrogen. The performance of the prototype detector was evaluated with a tunable low energy positron beam, resulting in a spatial resolution of approximate t

Human Macrophages and Dendritic Cells Can Equally Present MART-1 Antigen to CD8+ T Cells after Phagocytosis of Gamma-Irradiated Melanoma Cells

Dendritic cells (DC) can achieve cross-presentation of naturally-occurring tumor-associated antigens after phagocytosis and processing of dying tumor cells. They have been used in different clinical settings to vaccinate cancer patients. We have previously used gamma-irradiated MART-1 expressing melanoma cells as a source of antigens to vaccinate melanoma patients by injecting irradiated cells with BCG and GM-CSF or to load immature DC and use them as a vaccine. Other clinical trials have used IFN-gamma activated macrophage killer cells (MAK) to treat cancer patients. However, the clinical use of MAK has been based on their direct tumoricidal activity rather than on their ability to act as antigen-presenting cells to stimulate an adaptive antitumor response. Thus, in the present work, we compared the fate of MART-1 after phagocytosis of gamma-irradiated cells by clinical grade DC or MAK as well as the ability of these cells to cross present MART-1 to CD8+ T cells. Using a high affinity antibody against MART-1, 2A9, which specifically stains melanoma tumors, melanoma cell lines and normal melanocytes, the expression level of MART-1 in melanoma cell lines could be related to their ability to stimulate IFN-gamma production by a MART-1 specific HLA-A*0201-restricted CD8+ T cell clone. Confocal microscopy with Alexa Fluor®647-labelled 2A9 also showed that MART-1 could be detected in tumor cells attached and/or fused to phagocytes and even inside these cells as early as 1 h and up to 24 h or 48 h after initiation of co-cultures between gamma-irradiated melanoma cells and MAK or DC, respectively. Interestingly, MART-1 was cross-presented to MART-1 specific T cells by both MAK and DC co-cultured with melanoma gamma-irradiated cells for different time-points. Thus, naturally occurring MART-1 melanoma antigen can be taken-up from dying melanoma cells into DC or MAK and both cell types can induce specific CD8+ T cell cross-presentation thereafter

Shedding Light on the Galaxy Luminosity Function

From as early as the 1930s, astronomers have tried to quantify the statistical nature of the evolution and large-scale structure of galaxies by studying their luminosity distribution as a function of redshift - known as the galaxy luminosity function (LF). Accurately constructing the LF remains a popular and yet tricky pursuit in modern observational cosmology where the presence of observational selection effects due to e.g. detection thresholds in apparent magnitude, colour, surface brightness or some combination thereof can render any given galaxy survey incomplete and thus introduce bias into the LF. Over the last seventy years there have been numerous sophisticated statistical approaches devised to tackle these issues; all have advantages -- but not one is perfect. This review takes a broad historical look at the key statistical tools that have been developed over this period, discussing their relative merits and highlighting any significant extensions and modifications. In addition, the more generalised methods that have emerged within the last few years are examined. These methods propose a more rigorous statistical framework within which to determine the LF compared to some of the more traditional methods. I also look at how photometric redshift estimations are being incorporated into the LF methodology as well as considering the construction of bivariate LFs. Finally, I review the ongoing development of completeness estimators which test some of the fundamental assumptions going into LF estimators and can be powerful probes of any residual systematic effects inherent magnitude-redshift data.Comment: 95 pages, 23 figures, 3 tables. Now published in The Astronomy & Astrophysics Review. This version: bring in line with A&AR format requirements, also minor typo corrections made, additional citations and higher rez images adde

CIRCUS: an autonomous control system for antimatter, atomic and quantum physics experiments

AbstractA powerful and robust control system is a crucial, often neglected, pillar of any modern, complex physics experiment that requires the management of a multitude of different devices and their precise time synchronisation. The AEḡIS collaboration presents CIRCUS, a novel, autonomous control system optimised for time-critical experiments such as those at CERN’s Antiproton Decelerator and, more broadly, in atomic and quantum physics research. Its setup is based on Sinara/ARTIQ and TALOS, integrating the ALPACA analysis pipeline, the last two developed entirely in AEḡIS. It is suitable for strict synchronicity requirements and repeatable, automated operation of experiments, culminating in autonomous parameter optimisation via feedback from real-time data analysis. CIRCUS has been successfully deployed and tested in AEḡIS; being experiment-agnostic and released open-source, other experiments can leverage its capabilities.</jats:p

Positronium Laser Cooling via the 1 3 S − 2 3 P Transition with a Broadband Laser Pulse

We report on laser cooling of a large fraction of positronium (Ps) in free flight by strongly saturating the 1^{3}S-2^{3}P transition with a broadband, long-pulsed 243 nm alexandrite laser. The ground state Ps cloud is produced in a magnetic and electric field-free environment. We observe two different laser-induced effects. The first effect is an increase in the number of atoms in the ground state after the time Ps has spent in the long-lived 2^{3}P states. The second effect is one-dimensional Doppler cooling of Ps, reducing the cloud's temperature from 380(20) to 170(20) K. We demonstrate a 58(9)% increase in the fraction of Ps atoms with v_{1D}<3.7×10^{4}  ms^{-1}

Radiation damage characterization in implanted silica

The radiation damage produced in silica glass implanted with Ar+ and Au+ ions at different implantation energies and fluences was depth profiled by positron annihilation spectroscopy. The modification of the sub-nanovoids structure of the glass was investigated by measuring the change in the Doppler broadening of the 511keV positron annihilation line induced by the quenching of positronium, and the increasing of positron annihilation with oxygen defects. Two distinct defected regions were pointed out. The first region was found to be confined below the ion projected range Rp, and the second extended deep into the sample, up to two to three times the Rp plus the range straggling Rp. The type, origin and concentration of the defects are discussed

Pre-cavities defect distribution in He implanted silicon studied by slow positron beam

Several techniques were applied to study distributions of point defects created after He implantation in Si at an energy of 20 keV. The evolution of the defect distributions as a function of isocronal thermal anneling was studied in the 150-900 degrees C temperature range. In particular Doppler-broadening measurements with a slow positron beam were performed to gain information on open volume defects precursors of the cavities that are formed in He implanted silicon after thermal treatment. Profiles of displaced Si atoms, He, and vacancies are presented for the meaningful thermal treatments, and discussed

Direct evidence by positron annihilation spectroscopy of defect distributions deeper than R-p in Ar+ implanted silica glass

Positron annihilation spectroscopy was used to depth profile the modification of intrinsic structural nanovoids in silica glass implanted with Ar(+) ions at different fluences and implantation energies. Beyond an expected defect distribution below the ion projected range R(p), a second defect distribution extending more than two times deeper than R(p) was revealed. This second defective layer was found to be related to recoiled oxygen atoms whose diffusion is probably increased by the stress gradient induced by the compaction of the first layer