Discovery of a bright radio transient in M82: a new radio supernova?

In this Letter, we report the discovery of a new bright radio transient in M82. Using the Very Large Array, we observed the nuclear region of M82 at several epochs at 22 GHz and detected a new bright radio source in this galaxy's central region. We find a flux density for this flaring source that is ~300 times larger than upper limits determined in previous observations. The flare must have started between 2007 October 29 and 2008 March 24. Over the last year, the flux density of this new source has decreased from ~100 mJy to ~11 mJy. The lightcurve (based on only three data points) can be fitted better with an exponential decay than with a power law. Based on the current data we cannot identify the nature of this transient source. However, a new radio supernova seems to be the most natural explanation. With it's flux density of more than 100 mJy, it is at least 1.5 times brighter than SN1993J in M81 at the peak of its lightcurve at 22 GHz.Comment: accepted Astronomy & Astrophysics, 4 pages, 3 figures, final version & corrected abstract, also available at http://www.mpifr-bonn.mpg.de/staff/abrunthaler/pub.shtm

Dipole trap model for the metallic state in gated silicon-inversion layers

In order to investigate the metallic state in high-mobility Si-MOS structures, we have further developed and precised the dipole trap model which was originally proposed by B.L. Altshuler and D.L. Maslov [Phys. Rev. Lett.\ 82, 145 (1999)]. Our additional numerical treatment enables us to drop several approximations and to introduce a limited spatial depth of the trap states inside the oxide as well as to include a distribution of trap energies. It turns out that a pronounced metallic state can be caused by such trap states at appropriate energies whose behavior is in good agreement with experimental observations.Comment: 16 pages, 10 figures, submitte

Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

We compare the temperature dependence of resistivity \rho(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of \rho with temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance \rho(B) is qualitatively consistent with the theory; however, the lack of quantitative agreement indicates that the magnetoresistance is more susceptible to the sample-specific effects than \rho(T).Comment: 4 pages, 5 figures. References update

Reply to Comment on "Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers"

Reply to the Comment by V.T. Dolgopolov and A.V. Gold [cond-mat/0203276].Comment: 2 page