95 research outputs found
Features of radiation changes in electrical properties of InAlN/GaN HEMTs
The effect of the proton, electron, gamma - rays, and fast neutron irradiation on the parameters of InAlN/Ga
Triangular de Rham Cohomology of Compact Kahler Manifolds
We study the de Rham 1-cohomology H^1_{DR}(M,G) of a smooth manifold M with
values in a Lie group G. By definition, this is the quotient of the set of flat
connections in the trivial principle bundle by the so-called gauge
equivalence. We consider the case when M is a compact K\"ahler manifold and G
is a solvable complex linear algebraic group of a special class which contains
the Borel subgroups of all complex classical groups and, in particular, the
group of all triangular matrices. In this case, we get a
description of the set H^1_{DR}(M,G) in terms of the 1-cohomology of M with
values in the (abelian) sheaves of flat sections of certain flat Lie algebra
bundles with fibre (the Lie algebra of G) or, equivalently, in terms
of the harmonic forms on M representing this cohomology
Polya's inequalities, global uniform integrability and the size of plurisubharmonic lemniscates
First we prove a new inequality comparing uniformly the relative volume of a
Borel subset with respect to any given complex euclidean ball \B \sub \C^n
with its relative logarithmic capacity in \C^n with respect to the same ball
\B.
An analoguous comparison inequality for Borel subsets of euclidean balls of
any generic real subspace of \C^n is also proved.
Then we give several interesting applications of these inequalities.
First we obtain sharp uniform estimates on the relative size of \psh
lemniscates associated to the Lelong class of \psh functions of logarithmic
singularities at infinity on \C^n as well as the Cegrell class of
\psh functions of bounded Monge-Amp\`ere mass on a hyperconvex domain \W
\Sub \C^n.
Then we also deduce new results on the global behaviour of both the Lelong
class and the Cegrell class of \psh functions.Comment: 25 page
Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSb
The effect of 2 MeV electron bombardment up to total electron dose of 1×1019cm−2 on th
Electronic properties and pinning of the Fermi level in irradiated II–IV–V2 semiconductors
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