Study to determine and improve design for lithium-doped solar cells Quarterly report, 1 Jan. - 31 Mar. 1971

Lithium donor density gradient measurements for prediction of lithium cell behavior after electron irradiation and recoverabilit

Action of lithium in radiation-hardened silicon solar cells Quarterly report, 16 Jul. - 15 Oct. 1968

Action of lithium in recovery of irradiated silicon solar cell

Action of lithium in radiation hardened silicon solar cells Quarterly report, 23 Apr. - 15 Jul. 1968

Recovery properties of lithium containing p-n silicon solar cells after radiation damag

Study to determine and improve design for lithium-doped solar cells Quarterly report, 1 Apr. - 30 Jun. 1970

Lithium action effects on spontaneous annealing of radiation damage in bulk silicon and silicon solar cell

Radiation damage in lithium-containing solar cells Final report, 21 Jun. 1966 - 20 Mar. 1968

Interaction of lithium with defects induced in silicon solar cells by one MeV electron bombardmen

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55. The purpose of the experiment is to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of C-MOS and P-MOS devices shielded in front by flat slabs of aluminum and by a practically infinite shield in the back. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on-the-ground simulation experiment with Co-60, indicates that the measured space damage is smaller than predicted by about a factor of 2-3 for thin shields, but agrees well with predictions for thicker shields

Miniature High-Let Radiation Spectrometer for Space and Avionics Applications

This paper reports on the design and characterization of a small, low power, and low weight instrument, a High-LET Radiation Spectrometer (HiLRS), that measures energy deposited by heavy ions in microelectronic devices. The HILRS operates on pulse-height analysis principles and is designed for space and avionics applications. The detector component in the instrument is based on large scale arrays of p-n junctions. In this system, the pulse amplitude from a particle hit is directly proportional to the particle LET. A prototype flight unit has been fabricated and calibrated using several heavy ions with varying LETs and protons with several energies. The unit has been delivered to the Ballistic Missile Defense Organization (BMDO) c/o the Air Force Research Laboratory in Albuquerque, NM, for integration into the military Space Technology Research Vehicle (STRV), a US-UK cooperative mission. Another version of HILRS is being prepared for delivery in April to the Hubble Space Telescope (HST) project, to fly on the HST Orbital Systems Test (HOST) Platform on a shuttle mission

CRRES microelectronics package flight data analysis

A detailed in-depth analysis was performed on the data from some of the CRRES MEP (Microelectronics Package) devices. These space flight measurements covered a period of about fourteen months of mission lifetime. Several types of invalid data were identified and corrections were made. Other problems were noted and adjustments applied, as necessary. Particularly important and surprising were observations of abnormal device behavior in many parts that could neither be explained nor correlated to causative events. Also, contrary to prevailing theory, proton effects appeared to be far more significant and numerous than cosmic ray effects. Another unexpected result was the realization that only nine out of thirty-two p-MOS dosimeters on the MEP indicated a valid operation. Comments, conclusions, and recommendations are given