1 research outputs found
Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS<sub>2</sub>
We
report electronic transport measurements of devices based on
monolayers and bilayers of the transition-metal dichalcogenide MoS<sub>2</sub>. Through a combination of in situ vacuum annealing and electrostatic
gating we obtained ohmic contact to the MoS<sub>2</sub> down to 4
K at high carrier densities. At lower carrier densities, low-temperature
four probe transport measurements show a metal–insulator transition
in both monolayer and bilayer samples. In the metallic regime, the
high-temperature behavior of the mobility showed strong temperature
dependence consistent with phonon-dominated transport. At low temperature,
intrinsic field-effect mobilities approaching 1000
cm<sup>2</sup>/(V·s) were observed for both monolayer
and bilayer devices. Mobilities extracted from Hall effect measurements
were several times lower and showed a strong dependence on density,
likely caused by screening of charged impurity scattering at higher
densities