Bulk contribution to magnetotransport properties of low defect-density Bi2_2Te3_3 topological insulator thin films

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi$_2$Te$_3$ thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two-dimensional in nature.Comment: 12 pages, 5 figure

MgB2 tunnel junctions and SQUIDs

Recent advances in the realization and understanding of MgB2 tunnel junctions and SQUIDs are surveyed. High quality MgB2 junctions with suitable tunnel barriers have been realized based on both oriented and epitaxial thin MgB2 films. Multiband transport properties, such as the existence of two energy gaps, phonon spectra and anisotropy have been investigated with these junctions. We review the suitability of different barrier materials and recent advances in obtaining reproducible all-MgB2 Josephson junctions for superconducting electronic circuitry. The development of epitaxial thin films has also led to high-quality multiband MgB2 SQUIDs and magnetometers that operate at high temperatures. The multiband nature of MgB2 provides new phenomena such as the Leggett mode. Manipulating the different phases of the condensates could lead to novel MgB2 devices with phase degrees of freedom.\ud \u

Stabilization of the perovskite phase in the Y-Bi-O system by using a BaBiO3_{3} buffer layer

A topological insulating phase has theoretically been predicted for the thermodynamically unstable perovskite phase of YBiO$_{3}$. Here, it is shown that the crystal structure of the Y-Bi-O system can be controlled by using a BaBiO$_{3}$ buffer layer. The BaBiO$_{3}$ film overcomes the large lattice mismatch of 12% with the SrTiO$_{3}$ substrate by forming a rocksalt structure in between the two perovskite structures. Depositing an YBiO$_{3}$ film directly on a SrTiO$_{3}$ substrate gives a fluorite structure. However, when the Y-Bi-O system is deposited on top of the buffer layer with the correct crystal phase and comparable lattice constant, a single oriented perovskite structure with the expected lattice constants is observed.Comment: 8 pages, 7 figures + 4 pages supporting informatio

Thickness-Dependent Band Gap Modification in BaBiO3_{3}

The material BaBiO$_{3}$ is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because BaBiO$_{3}$ is suggested to return to its undistorted cubic phase where the oxygen octahedra breathing mode will be suppresse as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO$_{3}$ thickness series are studied using \textit{in-situ} scanning tunneling microscopy. We observe a wide-gap ($E_\textrm{G}$~$>$ 1.2 V) to small-gap~($E_\textrm{G}$~$\approx$ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO$_{3}$ film thickness. However, even for an ultra-thin BaBiO$_{3}$ film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness

Conduction spectroscopy of a proximity induced superconducting topological insulator

The combination of superconductivity and the helical spin-momentum locking at the surface state of a topological insulator (TI) has been predicted to give rise to p-wave superconductivity and Majorana bound states. The superconductivity can be induced by the proximity effect of a an s-wave superconductor (S) into the TI. To probe the superconducting correlations inside the TI, dI/dV spectroscopy has been performed across such S-TI interfaces. Both the alloyed Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ and the stoichiometric BiSbTeSe$_2$ have been used as three dimensional TI. In the case of Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$, the presence of disorder induced electron-electron interactions can give rise to an additional zero-bias resistance peak. For the stoichiometric BiSbTeSe$_2$ with less disorder, tunnel barriers were employed in order to enhance the signal from the interface. The general observations in the spectra of a large variety of samples are conductance dips at the induced gap voltage, combined with an increased sub-gap conductance, consistent with p-wave predictions. The induced gap voltage is typically smaller than the gap of the Nb superconducting electrode, especially in the presence of an intentional tunnel barrier. Additional uncovered spectroscopic features are oscillations that are linearly spaced in energy, as well as a possible second order parameter component.Comment: Semiconductor Science and Technology; Special Issue on Hybrid Quantum Materials and Device

Artificial oxide heterostructures with non-trivial topology

In the quest for topological insulators with large band gaps, heterostructures with Rashba spin-orbit interactions come into play. Transition metal oxides with heavy ions are especially interesting in this respect. We discuss the design principles for stacking oxide Rashba layers. Assuming a single layer with a two-dimensional electron gas (2DEG) on both interfaces as a building block, a two-dimensional topological insulating phase is present when negative coupling between the 2DEGs exists. When stacking multiple building blocks, a two-dimensional or three-dimensional topological insulator is artificially created, depending on the intra- and interlayer coupling strengths and the number of building blocks. We show that the three-dimensional topological insulator is protected by reflection symmetry, and can therefore be classified as a topological crystalline insulator. In order to isolate the topological states from bulk states, the intralayer coupling term needs to be quadratic in momentum. It is described how such a quadratic coupling could potentially be realized by taking buckling within the layers into account. The buckling, thereby, brings the idea of stacked Rashba system very close to the alternative approach of realizing the buckled honeycomb lattice in [111]-oriented perovskite oxides.Comment: Accepted for publication in Journal of Physics: Condensed Matte

Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe2_2

The quantum Hall effect is studied in the topological insulator BiSbTeSe$_2$. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall edge channels are counter-propagating. The opposite edge mode direction, combined with the opposite helicities of top and bottom surfaces, allows for scattering between these counter-propagating edge modes. The total Hall conductance is integer valued only when the scattering is strong. For weaker interaction, a non-integer quantum Hall effect is expected and measured