1,298 research outputs found
Local characterization and engineering of proximitized correlated states in graphene-NbSe vertical heterostructures
Using a van der Waals vertical heterostructure consisting of monolayer
graphene, monolayer hBN and NbSe, we have performed local characterization
of induced correlated states in different configurations. At a temperature of
4.6 K, we have shown that both superconductivity and charge density waves can
be induced in graphene from NbSe2 by proximity effects. By applying a vertical
magnetic field, we imaged the Abrikosov vortex lattice and extracted the
coherence length for the proximitized superconducting graphene. We further show
that the induced correlated states can be completely blocked by adding a
monolayer hBN between the graphene and the NbSe, which demonstrates the
importance of the tunnel barrier and surface conditions between the normal
metal and superconductor for the proximity effect.Comment: 7 pages, 5 figure
Ultrafast relaxation of hot phonons in Graphene-hBN Heterostructures
Fast carrier cooling is important for high power graphene based devices.
Strongly Coupled Optical Phonons (SCOPs) play a major role in the relaxation of
photoexcited carriers in graphene. Heterostructures of graphene and hexagonal
boron nitride (hBN) have shown exceptional mobility and high saturation
current, which makes them ideal for applications, but the effect of the hBN
substrate on carrier cooling mechanisms is not understood. We track the cooling
of hot photo-excited carriers in graphene-hBN heterostructures using ultrafast
pump-probe spectroscopy. We find that the carriers cool down four times faster
in the case of graphene on hBN than on a silicon oxide substrate thus
overcoming the hot phonon (HP) bottleneck that plagues cooling in graphene
devices.Comment: Pages 1-12: Main manuscript. Pages 13-18: Supplementary materia
In-Space technology experiments program. A high efficiency thermal interface (using condensation heat transfer) between a 2-phase fluid loop and heatpipe radiator: Experiment definition phase
Space Station elements and advanced military spacecraft will require rejection of tens of kilowatts of waste heat. Large space radiators and two-phase heat transport loops will be required. To minimize radiator size and weight, it is critical to minimize the temperature drop between the heat source and sink. Under an Air Force contract, a unique, high-performance heat exchanger is developed for coupling the radiator to the transport loop. Since fluid flow through the heat exchanger is driven by capillary forces which are easily dominated by gravity forces in ground testing, it is necessary to perform microgravity thermal testing to verify the design. This contract consists of an experiment definition phase leading to a preliminary design and cost estimate for a shuttle-based flight experiment of this heat exchanger design. This program will utilize modified hardware from a ground test program for the heat exchanger
Evolution of the electronic band structure of twisted bilayer graphene upon doping
The electronic band structure of twisted bilayer graphene develops van Hove
singularities whose energy depends on the twist angle between the two layers.
Using Raman spectroscopy, we monitor the evolution of the electronic band
structure upon doping using the G peak area which is enhanced when the laser
photon energy is resonant with the energy separation of the van Hove
singularities. Upon charge doping, the Raman G peak area initially increases
for twist angles larger than a critical angle and decreases for smaller angles.
To explain this behavior with twist angle, the energy of separation of the van
Hove singularities must decrease with increasing charge density demonstrating
the ability to modify the electronic and optical properties of twisted bilayer
graphene with doping.Comment: 10 pages, 4 figure
Pressure-induced commensurate stacking of graphene on boron nitride
Combining atomically-thin van der Waals materials into heterostructures
provides a powerful path towards the creation of designer electronic devices.
The interaction strength between neighboring layers, most easily controlled
through their interlayer separation, can have significant influence on the
electronic properties of these composite materials. Here, we demonstrate
unprecedented control over interlayer interactions by locally modifying the
interlayer separation between graphene and boron nitride, which we achieve by
applying pressure with a scanning tunneling microscopy tip. For the special
case of aligned or nearly-aligned graphene on boron nitride, the graphene
lattice can stretch and compress locally to compensate for the slight lattice
mismatch between the two materials. We find that modifying the interlayer
separation directly tunes the lattice strain and induces commensurate stacking
underneath the tip. Our results motivate future studies tailoring the
electronic properties of van der Waals heterostructures by controlling the
interlayer separation of the entire device using hydrostatic pressure.Comment: 17 pages, 4 figures and supplementary information. Updated to
published versio
Long wavelength local density of states oscillations near graphene step edges
Using scanning tunneling microscopy and spectroscopy, we have studied the
local density of states (LDOS) of graphene over step edges in boron nitride.
Long wavelength oscillations in the LDOS are observed with maxima parallel to
the step edge. Their wavelength and amplitude are controlled by the energy of
the quasiparticles allowing a direct probe of the graphene dispersion relation.
We also observe a faster decay of the LDOS oscillations away from the step edge
than in conventional metals. This is due to the chiral nature of the Dirac
fermions in graphene.Comment: 5 pages, 4 figures, to appear in Phys. Rev. Let
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