Photoinduced optical absorption and 400-nm luminescence in low-germanium-content optical fiber preforms irradiated with ArF and KrF excimer-laser light

The optical absorption spectrum and the 400-nm photoluminescence (PL) of a 1.4-mol. % Ge photosensitive optical fiber preform subjected to high fluence of 193-nm ArF and 248-nm KrF excimer-laser irradiation are measured. The largest absorption increases occur near 200  nm in both cases, but a small net bleaching of absorption is obtained near the laser wavelength for KrF irradiations. The blue PL decreases during ArF exposure but increases with the KrF laser. In similarly excited 9-mol. % Ge fiber preforms the blue PL always decreases. A study of the PL intensity as a function of irradiating laser light intensity shows no evidence of multiple photon absorption effects

Ion implantation induced photosensitivity in Ge-doped silica : E ect of induced defects on refractive index changes

Planar germanosilicate thin film glasses grown by flame hydrolysis technique on silica substrate have been implanted at 5 MeV with silicon ions to a dose of 1014 ions/cm2. Samples were subsequently exposed to a series of KrF (5 eV) and ArF (6.4 eV) excimer laser irradiation. Optical absorption and electron spin resonance were measured before and after each series of irradiation. We report an important refractive index change that can be correlated with the photobleaching of the ion implantation induced absorption bands

Difference in the behavior of oxygen deficient defects in Ge-doped silica optical fiber preforms under ArF and KrF excimer laser irradiation

Photobleaching of optical absorption bands in the 5 eV region and the creation of others at higher and lower energy have been examined in the case of ArF (6.4 eV) and KrF (5 eV) excimer laserirradiation of 3GeO2:97SiO2glasses. We report a difference in the transformation process of the neutral oxygen monovacancy and also of the germanium lone pair center (GLPC) into electron trap centers associated with fourfold coordinated Ge ions and Ge-E′ centers when we use one or the other laser. Correlations between absorption bands and electron spin resonance signals were made after different steps of laser irradiation. It was found that the KrF laser generates twice as many Ge-E′ centers as the ArF laser for the same dose of energy delivered. The main reason for this difference is found to be the more efficient bleaching of the GLPC (5.14 eV) by the KrF laser compared to that by the ArF laser

Si ion implantation-induced damage in fused silica probed by variable-energy positrons

Samples of synthetic fused silica have been implanted at room temperature with silicon ions of energy 1.5 MeV. Fluences ranged from 1011 to 1013 cm−2. Samples were probed using variable‐energy positron annihilation spectroscopy. The Doppler‐broadening S parameter corresponding to the implanted region decreased with increasing fluence and saturated at a fluence of 1013 cm−2. It is shown that the decrease in the S parameter is due to the suppression of positronium (Ps) which is formed in the preimplanted material, due to the competing process of implantation‐induced trapping of positrons. In order to satisfactorily model the positron data it was necessary to account for positron trapping due to defects created by both electronic and nuclear stopping of the implanted ions. Annealing of the 1013 cm−2 sample resulted in measurable recovery of the preimplanted S parameter spectrum at 350 °C and complete recovery to the preimplanted condition at 600 °C. Volume compaction was also observed afterimplantation. Upon annealing, the compaction was seen to decrease by 75%

Ion implantation-induced strong photosensitivity in high-purity fused silica: Correlation of index changes with VUV color centers

We have studied optical changes induced by ArF (6.4 eV/193 nm) excimer laser light illumination of high purity SiO2 implanted with Si2+ (5 MeV) at a fluence of 1015 ions/cm2. Optical absorption was measured from 3 eV (400 nm) to 8 eV (155 nm) and showed evidence of several well-defined absorption bands. A correlation in the bleaching behavior appears to exist between the so-called D band (located at 7.15 eV) and the well-known B2α band which is attributed to oxygen vacancies. Changes in the refractive index as a function of ArF illumination were measured and found to be in good quantitative agreement with a Kramers-Kronig analysis of the optical absorption data

Dichroism in the absorption spectrum of photobleached ion-implanted silica

The optical absorption spectrum of ion-implanted silica is shown to become dichroic when it is photobleached with polarized 248-nm light. The dichroism is modeled by a photobleaching process that bleaches color centers preferentially depending on their local orientation with respect to the polarization of the photobleaching light. A similar photobleaching process may occur in photosensitive fiber, thus providing a possible explanation for the birefringence that is observed in the photoinduced index change

Tubular structures of GaS

In this Brief Report we demonstrate, using density-functional tight-binding theory, that gallium sulfide (GaS) tubular nanostructures are stable and energetically viable. The GaS-based nanotubes have a semiconducting direct gap which grows towards the value of two-dimensional hexagonal GaS sheet and is in contrast to carbon nanotubes largely independent of chirality. We further report on the mechanical properties of the GaS-based nanotubes

Formation and bleaching of strong ultraviolet absorption bands in germanium implanted synthetic fused silica

Germanium ions have been implanted in fused silica using ion beams having energies of 3 and 5 MeV and doses ranging from 1×1012 to 5×1014 ions/cm2. For wavelengths shorter than 400 nm, the optical absorption increases strongly with two absorption bands appearing at 244 and 212 nm. The ion-induced optical absorption can be bleached almost completely by irradiation with 249 nm excimer laser light. Ion implantation also increases the refractive index of silica near the substrate surface. At 632.8 nm a refractive index increase of more than 10-2 has been measured. This decreases by 4×10-3 upon bleaching with 249 nm light