Smart CMOS image sensor for lightning detection and imaging

We present a CMOS image sensor dedicated to lightning detection and imaging. The detector has been designed to evaluate the potentiality of an on-chip lightning detection solution based on a smart sensor. This evaluation is performed in the frame of the predevelopment phase of the lightning detector that will be implemented in the Meteosat Third Generation Imager satellite for the European Space Agency. The lightning detection process is performed by a smart detector combining an in-pixel frame-to-frame difference comparison with an adjustable threshold and on-chip digital processing allowing an efficient localization of a faint lightning pulse on the entire large format array at a frequency of 1 kHz. A CMOS prototype sensor with a 256×256 pixel array and a 60 μm pixel pitch has been fabricated using a 0.35 μm 2P 5M technology and tested to validate the selected detection approach

Speed Analysis in Pinned Photodiode CMOS Image Sensors based on a Pulsed Storage-Gate Method

The charge transfer time represents the bottleneck in terms of temporal resolution in Pinned Photodiode (PPD) CMOS image sensors. This work focuses on the modeling and estimation of this key parameter. A simple numerical model of charge transfer in PPDs is presented. The model is based on a Montecarlo simulation and takes into account both charge diffusion in the PPD and the effect of potential obstacles along the charge transfer path. This work also presents a new experimental approach for the estimation of the charge transfer time, called pulsed Storage Gate (SG) method. This method, which allows reproduction of a “worst-case” transfer condition, is based on dedicated SG pixe

CMOS Image Sensor with on-chip Intelligence for Lightning Detection and Imaging

We present A CMOS image sensor dedicated to lightning detection and imaging. The detector has been designed for the pre-development phase of the lightning detector that will be implemented in Meteosat Third Generation Imager (MTG-I) satellite for European Space Agency (ESA). The lightning detection process (Patent applied) is performed by a smart detector combining on in-pixel frame to frame difference comparison with an adjustable threshold and onchip digital processing allowing an efficient localization of faint lightning pulse on the entire large format array at 1 kHz. A CMOS prototype sensor with a 256x256 pixel array and 60μm pixel pitch has been fabricated using a 0.35μm 2P 5M technology and tested to validate the selected detection approach. OCIS codes: (040.6070 ) Solid state detectors; (250.3140) Integrated optoelectronic circuits; (280.4788) Optical sensing and sensors; (110.2970) Image detection systems