Rashba precession in quantum wires with interaction

Rashba precession of spins moving along a one-dimensional quantum channel is calculated, accounting for Coulomb interactions. The Tomonaga--Luttinger model is formulated in the presence of spin-orbit scattering and solved by Bosonization. Increasing interaction strength at decreasing carrier density is found to {\sl enhance} spin precession and the nominal Rashba parameter due to the decreasing spin velocity compared with the Fermi velocity. This result can elucidate the observed pronounced changes of the spin splitting on applied gate voltages which are estimated to influence the interface electric field in heterostructures only little.Comment: now replaced by published versio

Anisotropic splitting of intersubband spin plasmons in quantum wells with bulk and structural inversion asymmetry

In semiconductor heterostructures, bulk and structural inversion asymmetry and spin-orbit coupling induce a k-dependent spin splitting of valence and conduction subbands, which can be viewed as being caused by momentum-dependent crystal magnetic fields. This paper studies the influence of these effective magnetic fields on the intersubband spin dynamics in an asymmetric n-type GaAs/AlGaAs quantum well. We calculate the dispersions of intersubband spin plasmons using linear response theory. The so-called D'yakonov-Perel' decoherence mechanism is inactive for collective intersubband excitations, i.e., crystal magnetic fields do not lead to decoherence of spin plasmons. Instead, we predict that the main signature of bulk and structural inversion asymmetry in intersubband spin dynamics is a three-fold, anisotropic splitting of the spin plasmon dispersion. The importance of many-body effects is pointed out, and conditions for experimental observation with inelastic light scattering are discussed.Comment: 8 pages, 6 figure

Phase transformation of PbSe/CdSe nanocrystals from core-shell to Janus structure studied by photoemission spectroscopy

Photoelectron spectroscopic measurements have been performed, with synchrotron radiation on PbSe/CdSe heteronanocrystals that initially consist of core-shell structures. The study of the chemical states of the main elements in the nanocrystals shows a reproducible and progressive change in the valence-band and core-level spectra under photon irradiation, whatever the core and shell sizes are. Such chemical modifications are explained in light of transmission electron microscopy observations and reveal a phase transformation of the nanocrystals: The core-shell nanocrystals undergo a morphological change toward a Janus structure with the formation of semidetached PbSe and CdSe clusters. Photoelectron spectroscopy gives new insight into the reorganization of the ligands anchored at the surface of the nanocrystals and the modification of the electronic structure of these heteronanocrystals

Intersubband spin-density excitations in quantum wells with Rashba spin splitting

In inversion-asymmetric semiconductors, spin-orbit coupling induces a k-dependent spin splitting of valence and conduction bands, which is a well-known cause for spin decoherence in bulk and heterostructures. Manipulating nonequilibrium spin coherence in device applications thus requires understanding how valence and conduction band spin splitting affects carrier spin dynamics. This paper studies the relevance of this decoherence mechanism for collective intersubband spin-density excitations (SDEs) in quantum wells. A density-functional formalism for the linear spin-density matrix response is presented that describes SDEs in the conduction band of quantum wells with subbands that may be non-parabolic and spin-split due to bulk or structural inversion asymmetry (Rashba effect). As an example, we consider a 40 nm GaAs/AlGaAs quantum well, including Rashba spin splitting of the conduction subbands. We find a coupling and wavevector-dependent splitting of the longitudinal and transverse SDEs. However, decoherence of the SDEs is not determined by subband spin splitting, due to collective effects arising from dynamical exchange and correlation.Comment: 10 pages, 4 figure

Spin injection into a ballistic semiconductor microstructure

A theory of spin injection across a ballistic ferromagnet-semiconductor-ferromagnet junction is developed for the Boltzmann regime. Spin injection coefficient $\gamma$ is suppressed by the Sharvin resistance of the semiconductor $r_N^*=(h/e^2)(\pi^2/S_N)$, where $S_N$ is the Fermi-surface cross-section. It competes with the diffusion resistances of the ferromagnets $r_F$, and $\gamma\sim r_F/r_N^*\ll 1$ in the absence of contact barriers. Efficient spin injection can be ensured by contact barriers. Explicit formulae for the junction resistance and the spin-valve effect are presented.Comment: 5 pages, 2 column REVTeX. Explicit prescription relating the results of the ballistic and diffusive theories of spin injection is added. To this end, some notations are changed. Three references added, typos correcte

Spintronics: Fundamentals and applications

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes from the published versio

Slow Spin Relaxation in Two-Dimensional Electron Systems with Antidots

We report a Monte Carlo investigation of the effect of a lattice of antidots on spin relaxation in twodimensional electron systems. The spin relaxation time is calculated as a function of geometrical parameters describing the antidot lattice, namely, the antidot radius and the distance between their centers. It is shown that spin polarization relaxation can be efficiently suppressed by the chaotic spatial motion due to the antidot lattice. This phenomenon offers a new approach to spin coherence manipulation in spintronics devices.Comment: submitted to Phys. Rev.

Probing the Thermal Deoxygenation of Graphene Oxide using High Resolution In Situ X-Ray based Spectroscopies

Despite the recent developments in Graphene Oxide due to its importance as a host precursor of Graphene, the detailed electronic structure and its evolution during the thermal reduction remain largely unknown, hindering its potential applications. We show that a combination of high resolution in situ X-ray photoemission and X-ray absorption spectroscopies offer a powerful approach to monitor the deoxygenation process and comprehensively evaluate the electronic structure of Graphene Oxide thin films at different stages of the thermal reduction process. It is established that the edge plane carboxyl groups are highly unstable, whereas carbonyl groups are more difficult to remove. The results consistently support the formation of phenol groups through reaction of basal plane epoxide groups with adjacent hydroxyl groups at moderate degrees of thermal activation (~400 {\deg}C). The phenol groups are predominant over carbonyl groups and survive even at a temperature of 1000 {\deg}C. For the first time a drastic increase in the density of states (DOS) near the Fermi level at 600 {\deg}C is observed, suggesting a progressive restoration of aromatic structure in the thermally reduced graphene oxideComment: Pagona Papakonstantinou as Corresponding author, E-mail: [email protected]