4 research outputs found
Electric-field tuning of the valley splitting in silicon corner dots
We perform an excited state spectroscopy analysis of a silicon corner dot in
a nanowire field-effect transistor to assess the electric field tunability of
the valley splitting. First, we demonstrate a back-gate-controlled transition
between a single quantum dot and a double quantum dot in parallel that allows
tuning the device in to corner dot formation. We find a linear dependence of
the valley splitting on back-gate voltage, from to with a slope of (or equivalently a slope
of with respect to the effective field). The
experimental results are backed up by tight-binding simulations that include
the effect of surface roughness, remote charges in the gate stack and discrete
dopants in the channel. Our results demonstrate a way to electrically tune the
valley splitting in silicon-on-insulator-based quantum dots, a requirement to
achieve all-electrical manipulation of silicon spin qubits.Comment: 5 pages, 3 figures. In this version: Discussion of model expanded;
Fig. 3 updated; Refs. added (15, 22, 32, 34, 35, 36, 37
Contact resistances in trigate and FinFET devices in a Non-Equilibrium Green's Functions approach
We compute the contact resistances in trigate and FinFET devices
with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's
Functions approach. Electron-phonon, surface roughness and Coulomb scattering
are taken into account. We show that represents a significant part
of the total resistance of devices with sub-30 nm gate lengths. The analysis of
the quasi-Fermi level profile reveals that the spacers between the heavily
doped source/drain and the gate are major contributors to the contact
resistance. The conductance is indeed limited by the poor electrostatic control
over the carrier density under the spacers. We then disentangle the ballistic
and diffusive components of , and analyze the impact of different
design parameters (cross section and doping profile in the contacts) on the
electrical performances of the devices. The contact resistance and variability
rapidly increase when the cross sectional area of the channel goes below
nm. We also highlight the role of the charges trapped at the
interface between silicon and the spacer material.Comment: 16 pages, 15 figure
Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach
Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot
Silicon-based qubits: electrically-driven manipulation of spins in double quantum dots Weak spin–orbit effects in silicon can be exploited to electrically drive electron-spin resonance in a silicon nanowire quantum dot device with low-symmetry confinement potential. Andrea Corna and colleagues at Grenoble’s CEA and University Grenoble Alpes achieved this by fabricating a silicon nanowire device over a silicon-on-insulator wafer, on which the gate accumulation voltages can define two corner quantum dots. Quantum confinement allows the coupling of spin and valley degrees of freedom via spin–orbit coupling, despite its inherent weakness in silicon, when the energy splitting between the valley energy eigenstates matches the magnetic field-induced Zeeman spin splitting. The observation of electric-dipole spin-valley resonance demonstrates the potential of spin–orbit coupling for realizing electric-field-mediated spin control, which will be crucial for large-scale integration of silicon-based spin qubits