The synthesis of TiO2 thin film by Chemical Bath Deposition (CBD) method

Titanium oxide (TiO2) films have several advantages for applications in solar cells and very commonly used as a photo-catalyst for degradation of environmental pollutants. In this study, TiO2 films were synthesized using, a simple, less expensive, low temperature and convenient for large area deposition method, a chemical bath deposition (CBD) and their structural and optical properties were examined at various calcinations temperatures. The X-ray diffraction (XRD) technique shows the presence of the picks characteristic of anatase phase after annealing our films at 500°C, 600°C and rutile phase appears after heat treatment at 700°C. The surface morphology of the deposited films was characterized by the FEG scanning electronic microscopy (FEGSEM) and atomic force microscopy (AFM). Energy dispersive X-ray spectroscopy (EDS) analysis was used to determine the chemical composition of the prepared films. The UV-Vis-NIR spectroscopy shows that the film exhibits a transmission around 60%. The indirect band gap of the deposited films was between 2.88 and 3.22 eV

NUMERICAL SIMULATION OF PHOTOCURRENT IN A SOLAR CELL BASED AMORPHOUS SILICON

We propose in this work, a method of simulation based on the resolution of the equations of continuities for homostructures of silicon-based solar, and used a method of calculation the photocurrent delivered by the silicon solar cell applying the equations of continuities and the currents by analogy to the phenomena of loads transport according to the model of an homojunction n-a-Si:H/p-a-Si:H. We used Matlab software to simulate and optimize the layers thicknesses to achieve the maximum photocurrent generated under AM1.5 solar spectrum. The optimization of donor layer thickness shows clearly that the best results are obtained with the finest structures.  We worked out a numerical model based on the resolution of the equations of continuities who gave the results in good agreement with literature and which allowed, moreover a better control of the performances of the cells based on silicon, for their improvement

Numerical Simulation of Quantum Efficiency of Cd0.8Zn0.2S /CIGS Solar Cells

The paper presents a simulation study using the numerical simulator SCAPS-1D to model ZnO/Cd0.8Zn0.2S/CuIn(1-y)GaySe2/CuInSe2 structures. Effects of thickness of graded and ungraded CIGS absorbers and buffer layers on cell performance have been investigated with the aim to reach a higher efficiency. Quantum efficiency (QE) as function of wavelength and thickness of these layers was studied. The high efficiency of CIGS cells, in order of 22.05%, has reached with the absorbers thickness between 2µm and 3.5µm and with acceptor concentration of about 2.1016 cm3. Other hand, we investigate the effect of Cd0.8Zn0.2S ternary compound buffer on the top of the p-CIGS cell. These simulation results give some important indication to enable further development of multilayer thin-film solar cells based on CuInGaSe2 with Cd0.8Zn0.2S as buffer layer instead of Cd