SECONDARY ION MASS SPECTROMETRY STUDIES of ERBIUM IMPLANTED IN SEMICONDUCTORS GaP,GaAs AND InP

近年来掺稀土元素的Ⅲ—V族化合物研究在基础物理和器件应用方面都越来越引起人们的关注,其中又由于Er-(3+)的-4I_(13/2)—4-I——(15/2)的特征发光波长为1.54μM,恰好对应于石英光纤的低损耗区,且离子注入技术简单易行,因而倍受重视.国际上已报道了不少有关Er注入Ⅲ—V族化合物的研究,大多选用较低的注入剂量(约10-(12)~10-(14)Er/CM-2),而对较高剂量的注入有待于进一步研究.Er ions were implanted in II-V compounds semiconductors GaP,GaAs and InP with relatively high dosages 5X1014/cm2 at 150keV and 350keV,respectively.Secondary Ion Mass Spectrpmetry(SIMS)depth profiles were carried out on a Cameca IMS4F ionmi-croprobe using a 600nA,15keV O2+ primary beam,rastered by 400mX400m over the sample.A mechanical aperture was employed to select positive secondary ions From the central portion of the crater(-60m in diameter).The crater total depth was measured using a profilometer.Depth profiles have been obtained and the peak depths in GaP, GaAs,InP are 55nm,51nm,56nm and 85nm,83nm,80nm at 150keV and 350keV,respectively.The sharp photoluminescence (PL)spectra have been observed at 1.538m, which correspond to the transition From the First state 4I13/2 to the ground state 4I15/2 of Er3+ aFter Face to Face annealing.国家自然科学基金资助项