Band alignment of epitaxial ZnS/Zn_(3)P_2 heterojunctions

The energy-band alignment of epitaxial zb-ZnS(001)/α-Zn_(3)P_(2)(001) heterojunctions has been determined by measurement of shifts in the phosphorus 2p and sulfur 2p core-level binding energies for various thicknesses (0.6–2.2 nm) of ZnS grown by molecular beam epitaxy on Zn_(3)P_(2). In addition, the position of the valence-band maximum for bulk ZnS and Zn3P2 films was estimated using density functional theory calculations of the valence-band density-of-states. The heterojunction was observed to be type I, with a valence-band offset, ΔE_V, of −1.19 ± 0.07 eV, which is significantly different from the type II alignment based on electron affinities that is predicted by Anderson theory. n^(+)-ZnS/p-Zn_(3)P_(2) heterojunctions demonstrated open-circuit voltages of >750 mV, indicating passivation of the Zn_(3)P_(2) surface due to the introduction of the ZnS overlayer. Carrier transport across the heterojunction devices was inhibited by the large conduction-band offset, which resulted in short-circuit current densities of <0.1 mA cm^(−2) under 1 Sun simulated illumination. Hence, constraints on the current density will likely limit the direct application of the ZnS/Zn_(3)P_(2) heterojunction to photovoltaics, whereas metal-insulator-semiconductor structures that utilize an intrinsic ZnS insulating layer appear promising

Interface stoichiometry control to improve device voltage and modify band alignment in ZnO/Cu_2O heterojunction solar cells

The interface stoichiometry of cuprous oxide (Cu_2O) was controlled by adjusting the O_2 and Zn partial pressures during ZnO sputter deposition and measured by high-resolution X-ray photoelectron spectroscopy of ultrathin (<3 nm) ZnO films on Cu_2O. Open-circuit voltage measurements for ZnO/Cu_2O heterojunctions under AM1.5 illumination were measured and it was found that a stoichiometric interface can achieve the voltage entitlement dictated by the band alignment, whereas the non-stoichiometric interface showed large open-circuit voltage deficits. These results highlight not only the need for stoichiometric interfaces in Cu_2O devices, but also a reproducible experimental method for achieving stoichiometric interfaces that could be applied to any potential heterojunction partner. Additionally, valence-band offset measurements indicated changing the interface stoichiometry shifted the band alignment between Cu_2O and ZnO, which accounts for the variation in previously reported band offset values

Passivation of Zn_3P_2 substrates by aqueous chemical etching and air oxidation

Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn_(3)P_2 surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn_(3)P_2 substrates. Zn_(3)P_2 substrates that were etched with Br_2 in methanol exhibited surface recombination velocity values of 2.8 × 10^4 cm s^(−1), whereas substrates that were further treated by aqueous HF–H_(2)O_2 exhibited surface recombination velocity values of 1.0 × 10^4 cm s^(−1). Zn_(3)P_2 substrates that were etched with Br_2 in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 10^3 cm s^(−1), as well as improved ideality in metal/insulator/semiconductor devices

Energy-band alignment of II-VI/Zn_(3)P_2 heterojunctions from x-ray photoemission spectroscopy

The energy-band alignments for zb-ZnSe(001)/α-Zn_(3)P_2(001), w-CdS(0001)/α-Zn_(3)P_2(001), and w-ZnO(0001)/α-Zn_(3)P_2(001) heterojunctions have been determined using high-resolution x-ray photoelectron spectroscopy via the Kraut method. Ab initio hybrid density functional theory calculations of the valence-band density of states were used to determine the energy differences between the core level and valence-band maximum for each of the bulk materials. The ZnSe/Zn_(3)P_2 heterojunction had a small conduction-band offset, ΔEC, of −0.03 ± 0.11 eV, demonstrating a nearly ideal energy-band alignment for use in thin-film photovoltaic devices. The CdS/Zn_(3)P_2 heterojunction was also type-II but had a larger conduction-band offset of ΔEC = −0.76 ± 0.10 eV. A type-III alignment was observed for the ZnO/Zn_(3)P_2 heterojunction, with ΔEC = −1.61 ± 0.16 eV indicating the formation of a tunnel junction at the oxide–phosphide interface. The data also provide insight into the role of the II-VI/Zn_(3)P_2 band alignment in the reported performance of Zn_(3)P_2 heterojunction solar cells

Growth Mechanism and Electronic Structure of Zn_3P_2 on the Ga-Rich GaAs(001) Surface

The growth of epitaxial Zn_3P_2 films on III–V substrates unlocks a promising pathway toward high-efficiency, earth-abundant photovoltaic devices fabricated on reusable, single-crystal templates. The detailed chemical, structural, and electronic properties of the surface and interface of pseudomorphic Zn_3P_2 epilayers grown on GaAs(001) were investigated using scanning tunneling microscopy/spectroscopy and high-resolution X-ray photoelectron spectroscopy. Two interesting features of the growth process were observed: (1) vapor-phase P4 first reacts with the Ga-rich GaAs surface to form an interfacial GaP layer with a thickness of several monolayers, and (2) a P-rich amorphous overlayer is present during the entire film growth process, beneath which a highly ordered Zn_3P_2 crystalline phase is precipitated. These features were corroborated by transmission electron micrographs of the Zn_3P_2/GaAs interface as well as density functional theory calculations of P reactions with the GaAs surface. Finally, the valence-band offset between the crystalline Zn_3P_2 epilayer and the GaAs substrate was determined to be ΔE_V = 1.0 ± 0.1 eV, indicating the formation of a hole-depletion layer at the substrate surface which may inhibit formation of an ohmic contact

Performance Enhancement of a Graphene-Zinc Phosphide Solar Cell Using the Electric Field-Effect

The optical transparency and high electron mobility of graphene make it an attractive material for photovoltaics. We present a field-effect solar cell using graphene to form a tunable junction barrier with an Earth-abundant and low cost zinc phosphide (Zn_3P_2) thin-film light absorber. Adding a semitransparent top electrostatic gate allows for tuning of the graphene Fermi level and hence the energy barrier at the graphene-Zn_3P_2 junction, going from an ohmic contact at negative gate voltages to a rectifying barrier at positive gate voltages. We perform current and capacitance measurements at different gate voltages in order to demonstrate the control of the energy barrier and depletion width in the zinc phosphide. Our photovoltaic measurements show that the efficiency conversion is increased 2-fold when we increase the gate voltage and the junction barrier to maximize the photovoltaic response. At an optimal gate voltage of +2 V, we obtain an open-circuit voltage of V_(oc) = 0.53 V and an efficiency of 1.9% under AM 1.5 1-sun solar illumination. This work demonstrates that the field effect can be used to modulate and optimize the response of photovoltaic devices incorporating grapheme

CD4+ T cell recovery during suppression of HIV replication: an international comparison of the immunological efficacy of antiretroviral therapy in North America, Asia and Africa

Background: Even among HIV-infected patients who fully suppress plasma HIV RNA replication on antiretroviral therapy, genetic (e.g. CCL3L1 copy number), viral (e.g. tropism) and environmental (e.g. chronic exposure to microbial antigens) factors influence CD4 recovery. These factors differ markedly around the world and therefore the expected CD4 recovery during HIV RNA suppression may differ globally. Methods: We evaluated HIV-infected adults from North America, West Africa, East Africa, Southern Africa and Asia starting non-nucleoside reverse transcriptase inhibitor-based regimens containing efavirenz or nevirapine, who achieved at least one HIV RNA level <500/µl in the first year of therapy and observed CD4 changes during HIV RNA suppression. We used a piecewise linear regression to estimate the influence of region of residence on CD4 recovery, adjusting for socio-demographic and clinical characteristics. We observed 28 217 patients from 105 cohorts over 37 825 person-years. Results: After adjustment, patients from East Africa showed diminished CD4 recovery as compared with other regions. Three years after antiretroviral therapy initiation, the mean CD4 count for a prototypical patient with a pre-therapy CD4 count of 150/µl was 529/µl [95% confidence interval (CI): 517-541] in North America, 494/µl (95% CI: 429-559) in West Africa, 515/µl (95% CI: 508-522) in Southern Africa, 503/µl (95% CI: 478-528) in Asia and 437/µl (95% CI: 425-449) in East Africa. Conclusions: CD4 recovery during HIV RNA suppression is diminished in East Africa as compared with other regions of the world, and observed differences are large enough to potentially influence clinical outcomes. Epidemiological analyses on a global scale can identify macroscopic effects unobservable at the clinical, national or individual regional leve

Retention in Care and Connection to Care among HIV-Infected Patients on Antiretroviral Therapy in Africa: Estimation via a Sampling-Based Approach

Current estimates of retention among HIV-infected patients on antiretroviral therapy (ART) in Africa consider patients who are lost to follow-up (LTF) as well as those who die shortly after their last clinic visit to be no longer in care and to represent limitations in access to care. Yet many lost patients may have "silently" transferred and deaths shortly after the last clinic visit more likely represent limitations in clinical care rather than access to care after initial linkage.We evaluated HIV-infected adults initiating ART from 1/1/2004 to 9/30/2007 at a clinic in rural Uganda. A representative sample of lost patients was tracked in the community to obtain updated information about care at other ART sites. Updated outcomes were incorporated with probability weights to obtain "corrected" estimates of retention for the entire clinic population. We used the competing risks approach to estimate "connection to care"--the percentage of patients accessing care over time (including those who died while in care).Among 3,628 patients, 829 became lost, 128 were tracked and in 111, updated information was obtained. Of 111, 79 (71%) were alive and 35/48 (73%) of patients interviewed in person were in care and on ART. Patient retention for the clinic population assuming lost patients were not in care was 82.3%, 68.9%, and 60.1% at 1, 2 and 3 years. Incorporating updated care information from the sample of lost patients increased estimates of patient retention to 85.8% to 90.9%, 78.9% to 86.2% and 75.8% to 84.7% at the same time points.Accounting for "silent transfers" and early deaths increased estimates of patient retention and connection to care substantially. Deaths soon after the last clinic visit (potentially reflecting limitations in clinical effectiveness) and disconnection from care among patient who were alive each accounted for approximately half of failures of retention