Oxygen migration pathways in layered LnBaCo2O6-δ (Ln = La-Y) perovskites

Funding: Engineering and Physical Sciences Research Council - EP/L016419/1.Layered LnBaCo2O6-δ perovskites are important mixed ionic-electronic conductors, exhibiting outstanding catalytic properties for the oxygen evolution/reduction reaction. These phases exhibit considerable structural complexity, in particular, near room temperature, where a number of oxygen vacancy ordered superstructures are found. This study uses bond valence site energy calculations to demonstrate the key underlying structural features that favor facile ionic migration. BVSE calculations show that the 1D vacancy ordering for Ln = Sm–Tb could be beneficial at low temperatures as new pathways with reduced barriers emerge. By contrast, the 2D vacancy ordering for Ln = Dy and Y is not beneficial for ionic transport with the basic layered parent material having lower migration barriers. Overall, the key criterion for low migration barriers is an expanded ab plane, supported by Ba, coupled to a small Ln size. Hence, Ln = Y should be the best composition, but this is stymied by the low temperature 2D vacancy ordering and moderate temperature stability. The evolution of the oxygen cycling capability of these materials is also reported.Peer reviewe

Critical mode and band-gap-controlled bipolar thermoelectric properties of SnSe

The reliable calculation of electronic structures and understanding of electrical properties depends on an accurate model of the crystal structure. Here, we have reinvestigated the crystal structure of the high-zT thermoelectric material tin selenide, SnSe, between 4 and 1000 K using high-resolution neutron powder diffraction. Symmetry analysis reveals the presence of four active structural distortion modes, one of which is found to be active over a relatively wide range of more than +/-200 K around the symmetry-breaking Pnma-Cmcm transition at 800 K. Density functional theory calculations on the basis of the experimental structure parameters show that the unusual, step-like temperature dependencies of the electrical transport properties of SnSe are caused by the onset of intrinsic bipolar conductivity, amplified and shifted to lower temperatures by a rapid reduction of the band gap between 700 and 800 K. The calculated band gap is highly sensitive to small out-of-plane Sn displacements observed in the diffraction experiments. SnSe with a sufficiently controlled acceptor concentration is predicted to produce simultaneously a large positive and a large negative Seebeck effect along different crystal directions.Comment: 7 pages, 7 figures, accepted for publication in Phys. Rev. Material

Alloying and doping control in the layered metal phosphide thermoelectric CaCuP

Engineering and Physical Sciences Research Council - EP/R023751/1, EP/T019298/1, EP/W037300/1; Leverhulme Trust - RPG-2020-177We recently identified CaCuP as a potential low cost, low density thermoelectric material, achieving zT = 0.5 at 792 K. Its performance is limited by a large lattice thermal conductivity, κL, and by intrinsically large p-type doping levels. In this paper, we address the thermal and electronic tunability of CaCuP. Isovalent alloying with As is possible over the full solid solution range in the CaCuP1–xAsx series. This leads to a reduction in κL due to mass fluctuations but also to a detrimental increase in p-type doping due to increasing Cu vacancies, which prevents zT improvement. Phase boundary mapping, exploiting small deviations from 1:1:1 stoichiometry, was used to explore doping tunability, finding increasing p-type doping to be much easier than decreasing the doping level. Calculation of the Lorenz number within the single parabolic band approximation leads to an unrealistic low κL for highly doped samples consistent with the multiband behavior in these materials. Overall, CaCuP and slightly Cu-enriched CaCu1.02P yield the best performance, with zT approaching 0.6 at 873 K.Publisher PDFPeer reviewe