1 research outputs found
The Chemistry of Imperfections in N‑Graphene
Many propositions have been already
put forth for the practical
use of N-graphene in various devices, such as batteries, sensors,
ultracapacitors, and next generation electronics. However, the chemistry
of nitrogen imperfections in this material still remains an enigma.
Here we demonstrate a method to handle N-impurities in graphene, which
allows efficient conversion of pyridinic N to graphitic N and therefore
precise tuning of the charge carrier concentration. By applying photoemission
spectroscopy and density functional calculations, we show that the
electron doping effect of graphitic N is strongly suppressed by pyridinic
N. As the latter is converted into the graphitic configuration, the
efficiency of doping rises up to half of electron charge per N atom