Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions

Evaluation of Fast Switching Diode 1N4448 Over a Wide Temperature Range

Electronic parts used in the design of power systems geared for space applications are often exposed to extreme temperatures and thermal cycling. Limited data exist on the performance and reliability of commercial-off-the-shelf (COTS) electronic parts at temperatures beyond the manufacturers specified operating temperature range. This report summarizes preliminary results obtained on the evaluation of automotive-grade, fast switching diodes over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these diodes and to determine suitability for use outside their recommended temperature limits

Reliability Assessment of Wide Bandgap Power Devices

No abstract availabl

Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors

The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed

Electronic Parts Applications Reporting and Tracking System (EPARTS)

No abstract availabl

Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature Range

Emerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions

Operation of Ultrafast, Low-Side MOSFET Driver, IXD609, over Wide Temperature Range

Electrical power and control systems designed for use in planetary exploration missions and deep space probes require electronics that are capable of efficient and reliable operation under extreme temperature conditions. In addition, space-based infrared satellites, all-electric ships, jet engines, electromagnetic launchers, magnetic levitation transport systems, and power facilities are also typical examples where system electronics are expected to be exposed to harsh temperatures and to operate under severe thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. In this work, the performance of an ultrafast gate driver for controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions

Body of Knowledge (BOK): Gallium Nitride (GaN) Power Electronics for Space Applications

Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This presentation summarizes a body of knowledge (BOK) document in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The presentation also discusses GaN's applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified

Overview of NASA's Solar Electric Propulsion Project

NASA is continuing to develop and qualify a state of the art 13 kW-class Advanced Electric Propulsion System (AEPS) for NASA exploration missions through a contract with Aerojet Rocketdyne (AR). An objective of the AEPS project is accelerate the adoption of high power electric propulsion technologies by reducing the risk and uncertainty of integrating Solar Electric Propulsion (SEP) technologies into space flight systems. NASA and AR have recently initiated testing of engineering hardware including the Hall Current Thruster (HCT), Power Processing Unit (PPU), and Xenon Flow Controller (XFC) at both the component and system levels. The successful completion of these tests will provide the required information to advance the AEPS system towards Critical Design Review. In support of the AEPS contract, NASA and JPL have been performing risk reduction activities to address specific concerns of this higher power Hall thruster propulsion system. These risk reduction activities have included long duration wear testing of the Technology Demonstration Unit (TDU) Hall thruster and cathode hardware, thermal cycling of TDU cathode heaters and coils, plasma plume measurements, and performed early circuit testing of the AEPS PPU design. In addition to the propulsion system development, the SEP project is developing the Plasma Diagnostic Package (PDP) and the SEP Testbed. The PDP is designed for use in conjunction with a high-powered electric propulsion (EP) system to characterize in-space operation. The SEP Testbed system is being developed to demonstrate integrated SEP system performance. The paper presents an overview of the NASA and the AEPS contract activities and a summary of the associated NASA in-house activities